Memory device and operation method

Abstract

A memory device and an operation method thereof are provided, and the operation method of the memory device includes following steps. A programming operation is performed to write an original data into a first memory array in the memory device. The original data in the first memory array is verified, and whether to generate a write signal is determined according to a verification result. An error correction code is generated according to the original data, and the error correction code and a write address are stored temporarily in a buffer circuit of the memory device. When the write signal is generated, the error correction code and the write address in the buffer circuit are written into a second memory array in the memory device.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a memory device and an operation method thereof, and particularly relates to a memory device having an error correction code and an operation method thereof.[0003]2. Description of Related Art[0004]Recently, phase-change memories have become the prospective non-volatile memory technology due to the advantages of low voltage, low power consumption, and high integration in the manufacturing processes, etc. Generally speaking, to ensure the accuracy of data in the phase-change memories, the conventional memory devices commonly store a corresponding error correction code (ECC) for each data in the phase-change memories. Thus, in the conventional memory devices, each data in the phase-change memories has a corresponding error correction code, which results in a large amount of memory space being required to store the error correction codes. The development of miniaturization of the memory devices is ...

AI Technical Summary

Benefits of technology

The invention is a memory device and operation method that reduces the memory space needed for error correction codes. It determines whether to write an error correction code based on the verification result of the original data in a first memory array. This reduces the amount of memory needed and helps in the development of smaller memory devices.

Problems solved by technology

Thus, in the conventional memory devices, each data in the phase-change memories has a corresponding error correction code, which results in a large amount of memory space being required to store the error correction codes.

The development of miniaturization of the memory devices is consequently limited.

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