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Etching device using etching chamber

a technology of etching device and etching chamber, which is applied in the manufacture of semiconductor/solid-state devices, basic electric elements, electrical equipment, etc., can solve the problems of vaporization of a portion of the etchant, limited commercial use of dry etching device, and high cost of the device for performing dry etching, so as to improve the product yield, prevent the vaporization of the etchant, and improve the selectivity of etching

Pending Publication Date: 2022-04-14
ZEUS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0036]In an etching device using an etching chamber according to the present invention, it is possible to prevent vaporization of an etchant by pressurizing an etchant storage chamber and / or an etching chamber. Therefore, a concentration of the etchant is kept constant, and thus, an etching selectivity can be remarkably improved.
[0037]In addition, since the concentration of the etchant is kept constant due to the pressurization, additional deionized water and an additional input of the etchant are not required to maintain the concentration. Accordingly, it is possible to improve a product yield and reduce consumption of the etchant.

Problems solved by technology

However, the dry etching has a limit to commercial use because a device for performing the dry etching is expensive.
However, in the wet etching, a portion of the etchant is vaporized during the etching.
Therefore, a temperature of the object may be lowered by heat of the vaporization, a concentration of the etchant is difficult to control due to the vaporization of the etchant, and thus, a critical dimension (CD) loss occurs.
Accordingly, in order to keep the concentration of the etchant constant, currently, a large amount of deionized water and etchant are added to an etching tank to etch the object, and in this case, an economic loss is large due to the addition of the large amount of deionized water and etchant.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

n Nitride Film Etchant Composition Containing a Silylphosphine Oxide-Based Compound

[0143](1) Preparation of Silylphosphine Oxide-Based Additive Compound

[0144]A silylphosphine oxide-based compound according to one aspect of the present invention was prepared.

[0145]First, H3PO4 anhydride (100%, 300 g) and Tetra-Ethyl-Ortho-Silicate (TEOS, 99%, 30 g) were mixed, and then, stirred at 60 rpm for 10 minutes to be mixed.

[0146]Next, the mixture was first reacted while being stirred at 60 rpm for 8 hours at a temperature of 60° C.

[0147]Next, after the first reaction was completed, a temperature of a reactor was raised to 120° C., the mixture was stirred at 60 rpm for 12 hours, and the secondary reaction was carried out.

[0148]Next, after the secondary reaction was completed, the temperature of the reactor was raised to 260° C., the mixture was stirred at 60 rpm for 3 hours, and a tertiary reaction was carried out.

[0149]Finally, after the tertiary reaction was completed, the temperature of the...

preparation example 2

d Silicon Nitride Film Etchant

[0152]Preparation of Composition

[0153]Without mixing the (1) silylphosphine oxide-based compound of Preparation Example 1, only phosphoric acid (H3PO4, 85 wt %) and water (H2O, 15.0 wt %) were mixed to prepare the phosphoric acid etchant composition.

preparation example 3

n Nitride Film Etchant Composition Containing Silyl Phosphate-Based Compound

[0154](1) Preparation of Silyl Phosphate-Based Additive Compound

[0155]A silyl phosphate-based compound according to one aspect of the present invention was prepared.

[0156]First, H3PO4 anhydride (100%, 300 g) and Tetra-Ethyl-Ortho-Silicate (TEOS, 99%, 30 g) were mixed, and then, stirred at 60 rpm for 10 minutes to be mixed.

[0157]Next, the mixture was first reacted while being stirred at 60 rpm for 8 hours at a temperature of 80° C.

[0158]Next, after the first reaction was completed, the temperature of the reactor was raised to 120° C., and the mixture was stirred at 60 rpm for 12 hours, and the secondary reaction was carried out.

[0159]Finally, after the secondary reaction was completed, the temperature of the reactor was cooled to room temperature to obtain a silyl phosphate-based compound.

[0160](2) Preparation of Silicon Nitride Film Etchant Composition Containing Silyl Phosphate-Based Compound

[0161]The silyl...

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Abstract

The present invention relates to an etching device using an etching chamber, comprising: an etchant storage chamber in which an etchant is stored; a connection unit communicating with the etching liquid storage chamber; an etching chamber which is connected with the etching liquid storage chamber through the connection unit, and in which an object is etched; and a pressurization maintaining unit for maintaining the etching liquid storage chamber and / or the etching chamber in a pressurized atmosphere.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)[0001]This application is a national entry of International Application No. PCT / KR2020 / 005304, filed on Apr. 22, 2020, which claims under 35 U.S.C. § 119(a) and 365(b) priority to and benefits of Korean Patent Application No. 10-2019-0047050, filed on Apr. 23, 2019 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention relates to an etching device using an etching chamber, and more particularly, to an etching device using an etching chamber with improved etching performance.BACKGROUND ART[0003]A silicon nitride film has been used as a representative insulating film in a semiconductor manufacturing process. The silicon nitride film has a structure in which the silicon nitride film is in contact with a silicon oxide film, a polysilicon film, a silicon wafer surface, or the like, and is deposited by a chemical vapor deposition (CVD) process and remo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/67
CPCH01L21/6708H01L21/67086H01L21/306C09K13/06H01L21/311H01L21/6719H01L21/67126H01L21/68742H01L21/67051H01L21/67028H01L21/67075H01L21/6715H01L21/67248H01L21/67739H01L21/30604H01L21/31111H01L21/67063H01L21/67373B08B3/04C09K13/04H01L21/6704
Inventor LEE, SEUNG HOONMO, SUNG WONLEE, YANG HOBAE, JEONG HYUNPARK, SEONG HWANCHO, HYUN DONG
Owner ZEUS