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Two stage microwave Class E power amplifier

a power amplifier and microwave technology, applied in amplifiers, amplifiers with semiconductor devices/discharge tubes, amplifiers, etc., can solve the problems of limited useful bandwidth of -e high power amplifiers (hpas), dc power, and lower efficiency, and achieve high power, broad frequency range, and high power.

Active Publication Date: 2007-09-04
RAYTHEON CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a load circuit that can be used with any switching mode circuit and includes a series inductive-capacitive network and a circuit for providing capacitance. This load circuit can provide a Class-E load to a high power amplifier and includes a novel inter-stage matching network (ISMN) and a high power stage using the load circuit. The load circuit and the ISMN are both adapted to provide simultaneous high power added efficiency and high power over a broad frequency range. The technical effects of this invention are improved performance and efficiency of high power amplifiers.

Problems solved by technology

Other classes of amplifiers such as class A, A / B and C, operate as current-sources with overlapping voltage and current waveforms and hence dissipate DC power, leading to a lower efficiency.
Present class-E high power amplifiers (HPAs) have limited useful bandwidth due to their highly tuned load circuits.
In recent years, the published work on monolithic class-E power amplifiers has been limited to narrow band (less than 500 MHz) RF frequencies covering the hand set cell phone market.
In addition, conventional class-E amplifiers have limited power outputs.
Increasing the active device, however, reduces the frequency range of the amplifier due to the increased capacitance at the input of the device.

Method used

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  • Two stage microwave Class E power amplifier
  • Two stage microwave Class E power amplifier
  • Two stage microwave Class E power amplifier

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Embodiment Construction

[0022]Illustrative embodiments and exemplary applications will now be described with reference to the accompanying drawings to disclose the advantageous teachings of the present invention.

[0023]While the present invention is described herein with reference to illustrative embodiments for particular applications, it should be understood that the invention is not limited thereto. Those having ordinary skill in the art and access to the teachings provided herein will recognize additional modifications, applications, and embodiments within the scope thereof and additional fields in which the present invention would be of significant utility.

[0024]FIG. 1 is a simplified block diagram of an illustrative embodiment of a two-stage Class-E high power amplifier 100 designed in accordance with the teachings of the present invention. The circuit 100 is specifically synthesized for high power operation (5.0 W-10.0 W or greater), providing a simultaneous high power added efficiency (PAE) and high...

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Abstract

A load circuit for use with a switching mode circuit. The novel load circuit includes a series inductive-capacitive network coupled to an output of the switching mode circuit and a circuit for providing a capacitance coupled to the output of the switching mode circuit. In an illustrative embodiment, the circuit for providing capacitance includes one or more lumped capacitors adapted to compensate for an intrinsic capacitance in the switching mode circuit. The load circuit may also include a shunt inductance coupled to the output of the switching mode circuit. In an illustrative embodiment, the load circuit is adapted to provide a Class-E load to a two-stage Class-E high power amplifier. The amplifier includes a driver stage, a novel Class-E inter-stage matching network (ISMN), and a high power stage using the novel load circuit.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to electrical and electronic circuits and systems. More specifically, the present invention relates to microwave Class E power amplifiers.[0003]2. Description of the Related Art[0004]Highly efficient microwave and radio frequency (RF) high power amplifiers are required for many commercial and military applications. Typical applications include wireless local area networks, cellular phones and telecommunication systems, as well as advanced airborne active phased array radar systems. Class-E power amplifiers are high-efficiency amplifiers that would be useful for these and other applications.[0005]Class-E amplifiers are part of the “switching mode amplifiers” such as class D, E, F, etc. These types of amplifiers include a transistor that operates as a perfect switch with no overlapping voltage and current waveforms at its output terminal, thereby ideally dissipating zero DC power. Other class...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H03F3/217
CPCH03F3/191H03F3/2176H03F2200/391H03F3/217
Inventor TAYRANI, REZA
Owner RAYTHEON CO