Method for determining a matrix of transmission cross coefficients in an optical proximity correction of mask layouts

a transmission cross coefficient and mask layout technology, applied in the field of determining the transmission cross coefficient matrix in the optical proximity correction of mask layout, can solve the problems of reducing the achievable resolution limit of the mask structure, inaccurate corrections of this type, distortion of the imaged mask layout on the semiconductor substrate wafer, etc., and achieves the effect of fast and efficient establishmen

a transmission cross coefficient and mask layout technology, applied in the field of determining the transmission cross coefficient matrix in the optical proximity correction of mask layout, can solve the problems of reducing the achievable resolution limit of the mask structure, inaccurate corrections of this type, distortion of the imaged mask layout on the semiconductor substrate wafer, etc., and achieves the effect of fast and efficient establishmen

US7328424B2Inactive Publication Date: 2008-02-05POLARIS INNOVATIONS LTD
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  • Method for determining a matrix of transmission cross coefficients in an optical proximity correction of mask layouts
  • Method for determining a matrix of transmission cross coefficients in an optical proximity correction of mask layouts
  • Method for determining a matrix of transmission cross coefficients in an optical proximity correction of mask layouts

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Embodiment Construction

[0028]FIG. 1 shows a block diagram of a typical correction run 1 of a model-based optical proximity correction for a mask structure of an original mask layout 4 of a lithography mask. With the aid of the correction run 1 carried out on a computer, corrections are made to the mask layout 4, which largely compensate for distortions of the image of the mask layout 4 on a semiconductor substrate wafer that occur during a lithography process.

[0029]For this purpose, firstly a simulation of the image of the mask structure of the original mask layout 4 is carried out with the aid of a simulation unit 2. The simulation unit 2 has an optical model 21 and also a resist model 22.

[0030]The optical model 21 is used to register illumination settings of the radiation source used for a lithography process, for example the geometry of an illumination diaphragm and an illumination angle, and also imaging properties of a lens or a lens system used for imaging the mask layout 4 onto a photoresist layer ...

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Abstract

The present invention relates to a method for determining a matrix of transmission cross coefficients w for an optical modeling in an optical proximity correction of mask layouts. In a first step, there is calculation of Fourier transforms of an illumination aperture, a lens aperture and a complex conjugate lens aperture, which are present in the form of image matrices with a predetermined raster. A second step involves calculating Fourier transforms for the transmission cross coefficients w from the Fourier transforms by means of a convolution theorem in order to obtain the matrix of the Fourier transforms of the transmission cross coefficients w. A further step involves inverse-transforming the Fourier transforms of the transmission cross coefficients w by means of a fast Fourier transformation in order to obtain the matrix of the transmission cross coefficients w for the optical modeling in the optical proximity correction of mass layouts.

Description

CLAIM FOR PRIORITY[0001]This application claims the benefit of priority to German Application No. 10 2004 030 961.2, filed Jun. 26, 2004, the contents of which are hereby incorporated by reference.TECHNICAL FIELD OF THE INVENTION[0002]The present invention relates to a method for determining a matrix of transmission cross coefficients for an optical modeling in an optical proximity correction of mask layouts, and to an optical proximity correction for a mask structure of a mask layout and also to a mask layout for a lithography mask with a mask structure.BACKGROUND OF THE INVENTION[0003]Particular patterning methods are used for fabricating large scale integrated electrical circuits with small structure dimensions. One of the most familiar methods known since the beginnings of semiconductor technology is the lithographic patterning method. In this case a radiation-sensitive resist or photoresist layer is applied to the surface of a semiconductor substrate wafer to be patterned and i...

Claims

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Application Information

Patent Timeline
05 Feb 2008
Publication
US7328424B2
IPC
G06F17/50; G06F17/10; G03F1/00; G03F1/36
CPC
G03F1/144; G03F1/36; G03F7/70441; G03F7/705
Inventors
KOHLE, RODERICK