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Memory device and semiconductor device

a memory device and semiconductor technology, applied in the field of memory devices and semiconductor devices, can solve the problems of increasing manufacturing costs, reducing yield, increasing the number of steps, etc., and achieve the effect of simplifying the manufacturing step

Inactive Publication Date: 2013-10-01
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0004]As above, a semiconductor device which sends and receives data wirelessly preferably has a structure including three of a transistor, a storage element, and an antenna. However, such a structure has problems in that the number of steps increases, the manufacturing cost increases, the yield decreases, and so on. Therefore, it is an object of the present invention to provide a semiconductor device in which the step is simplified, the manufacturing cost is suppressed, and the decrease in the yield is suppressed.
[0005]In the present invention made in view of the above problems, a conductive layer serving as an antenna is provided in the same layer as a conductive layer of another element. Moreover, the step of forming the conductive layer serving as an antenna is not provided independently, but the step of forming the conductive layer serving as an antenna is conducted at the same time as the step of forming a conductive layer of another element. This makes it possible to simplify the manufacturing step.
[0006]Further, the present invention provides a semiconductor device including a storage element having a simple structure in which a layer containing an organic compound is sandwiched between a pair of conductive layers. This characteristic can achieve the simplification of the manufacturing step and moreover provide a semiconductor device including a nonvolatile and additionally recordable storage element.
[0048]In the semiconductor device of the present invention having any one of the above structures, the conductive layer serving as an antenna is provided in the same layer as a conductive layer in a transistor or a storage element. This makes it possible to omit the independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified.

Problems solved by technology

However, such a structure has problems in that the number of steps increases, the manufacturing cost increases, the yield decreases, and so on.

Method used

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Effect test

embodiment mode 1

[Embodiment Mode 1]

[0070]Embodiment Mode 1 will describe a structure of a semiconductor device in which a transistor, a storage element, and an antenna are provided over one base.

[0071]A semiconductor device of the present invention has, over a base (also referred to as a substrate) 10, a transistor 14 including a semiconductor layer 11, an insulating layer 12 serving as a gate insulating layer, and a conductive layer 13 serving as a gate electrode; an insulating layer 15 covering the transistor 14; a conductive layer 16 connected to an impurity region in the semiconductor layer 11 through an opening portion provided in the insulating layer 15; a layer 17 containing an organic compound connected to the conductive layer 16; a conductive layer 18 connected to the layer 17 containing an organic compound; and a conductive layer 19 serving as an antenna (refer to FIG. 1A).

[0072]Moreover, the semiconductor device of the present invention has a base insulating film interposed between the b...

embodiment mode 2

[Embodiment Mode 2]

[0084]Next, a structure of a semiconductor device of the present invention which is different from the above one will be described.

[0085]A semiconductor device of the present invention comprises, over a base (also referred to as a substrate) 30, a transistor 34 including a semiconductor layer 31, an insulating layer 32 serving as a gate insulating layer, and a conductive layer 33 serving as a gate electrode; an insulating layer 35 covering the transistor 34; a conductive layer 36 connected to an impurity region in the semiconductor layer 31 through an opening portion provided in the insulating layer 35; an insulating layer 37 covering the conductive layer 36; a layer 38 containing an organic compound connected to the conductive layer 36 through an opening portion provided in the insulating layer 37; a conductive layer 39 in contact with the layer 38 containing an organic compound; and a conductive layer 40 serving as an antenna (refer to FIG. 2A).

[0086]Moreover, t...

embodiment mode 3

[Embodiment Mode 3]

[0098]A semiconductor device of the present invention comprises, over a base (also referred to as a substrate) 51, a conductive layer 52, a layer 53 containing an organic compound connected to the conductive layer 52, and a conductive layer 54 connected to the layer 53 containing an organic compound.

[0099]Moreover, the semiconductor device comprises, over a base 55, a transistor 59 including a semiconductor layer 56, an insulating layer 57 serving as a gate insulating layer, and a conductive layer 58 serving as a gate electrode; a insulating layer 60 covering the transistor 59; a conductive layer 61 connected to an impurity region in the semiconductor layer 56 through an opening portion provided in the insulating layer 60; and a conductive layer 62 serving as an antenna (refer to FIG. 3A).

[0100]Further, the semiconductor device has a base insulating film provided between the base 55 and the semiconductor layer 56, an insulating film covering conductive layers 61 a...

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PUM

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Abstract

The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Description

TECHNICAL FIELD[0001]The present invention relates to a semiconductor device which can send and receive data wirelessly.BACKGROUND ART[0002]In recent years, development of semiconductor devices which send and receive data wirelessly has been extensively advanced. Such semiconductor devices are referred to as IC chips, IC tags, RF chips, RF tags, wireless chips, wireless tags, electronic chips, electronic tags, wireless processors, wireless memories, or the like (for example, see Reference 1: Japanese Patent Application Laid-Open No. 2000-20665).[0003]Some of such semiconductor devices include antennas, storage elements, and transistors. The antenna is provided to receive an electric wave and the storage element is provided to store some kind of information. The transistor is provided as an element for constituting a part of a logic circuit which controls operation of the antenna, the storage element, and the like.DISCLOSURE OF INVENTION[0004]As above, a semiconductor device which se...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/08
Inventor MORIYA, YOSHITAKAWATANABE, YASUKOARAI, YASUYUKI
Owner SEMICON ENERGY LAB CO LTD
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