Memory device and semiconductor device
a memory device and semiconductor technology, applied in the field of memory devices and semiconductor devices, can solve the problems of increasing manufacturing costs, reducing yield, increasing the number of steps, etc., and achieve the effect of simplifying the manufacturing step
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embodiment mode 1
[Embodiment Mode 1]
[0070]Embodiment Mode 1 will describe a structure of a semiconductor device in which a transistor, a storage element, and an antenna are provided over one base.
[0071]A semiconductor device of the present invention has, over a base (also referred to as a substrate) 10, a transistor 14 including a semiconductor layer 11, an insulating layer 12 serving as a gate insulating layer, and a conductive layer 13 serving as a gate electrode; an insulating layer 15 covering the transistor 14; a conductive layer 16 connected to an impurity region in the semiconductor layer 11 through an opening portion provided in the insulating layer 15; a layer 17 containing an organic compound connected to the conductive layer 16; a conductive layer 18 connected to the layer 17 containing an organic compound; and a conductive layer 19 serving as an antenna (refer to FIG. 1A).
[0072]Moreover, the semiconductor device of the present invention has a base insulating film interposed between the b...
embodiment mode 2
[Embodiment Mode 2]
[0084]Next, a structure of a semiconductor device of the present invention which is different from the above one will be described.
[0085]A semiconductor device of the present invention comprises, over a base (also referred to as a substrate) 30, a transistor 34 including a semiconductor layer 31, an insulating layer 32 serving as a gate insulating layer, and a conductive layer 33 serving as a gate electrode; an insulating layer 35 covering the transistor 34; a conductive layer 36 connected to an impurity region in the semiconductor layer 31 through an opening portion provided in the insulating layer 35; an insulating layer 37 covering the conductive layer 36; a layer 38 containing an organic compound connected to the conductive layer 36 through an opening portion provided in the insulating layer 37; a conductive layer 39 in contact with the layer 38 containing an organic compound; and a conductive layer 40 serving as an antenna (refer to FIG. 2A).
[0086]Moreover, t...
embodiment mode 3
[Embodiment Mode 3]
[0098]A semiconductor device of the present invention comprises, over a base (also referred to as a substrate) 51, a conductive layer 52, a layer 53 containing an organic compound connected to the conductive layer 52, and a conductive layer 54 connected to the layer 53 containing an organic compound.
[0099]Moreover, the semiconductor device comprises, over a base 55, a transistor 59 including a semiconductor layer 56, an insulating layer 57 serving as a gate insulating layer, and a conductive layer 58 serving as a gate electrode; a insulating layer 60 covering the transistor 59; a conductive layer 61 connected to an impurity region in the semiconductor layer 56 through an opening portion provided in the insulating layer 60; and a conductive layer 62 serving as an antenna (refer to FIG. 3A).
[0100]Further, the semiconductor device has a base insulating film provided between the base 55 and the semiconductor layer 56, an insulating film covering conductive layers 61 a...
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