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Inrush current limiting circuit for pulse frequency modwlation to control charge pump

A technology for controlling circuits and limiting circuits, applied in the direction of measuring current/voltage, pulse shaping, pulse technology, etc., can solve problems such as circuit failure, increase of peak current, input power supply voltage drop, etc., to eliminate faults, suppress current, suppress The effect of noise

Inactive Publication Date: 2008-01-09
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in the case of PFM control, even in the normal oscillation cycle, a change in the input voltage during operation increases the peak current, making the GND potential change, which becomes a source of noise generation
[0003] However, in a conventional PFM controlled charge pump circuit, a large inrush flow will be induced under the excitation of the power supply
Also, since a large current flows due to a change in the input voltage even during normal operation, this large current causes a voltage drop of the input power supply and becomes a source of noise generation
As a result, there is a possibility that other circuits connected to the same input supply of the charge pump circuit may fail

Method used

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  • Inrush current limiting circuit for pulse frequency modwlation to control charge pump
  • Inrush current limiting circuit for pulse frequency modwlation to control charge pump
  • Inrush current limiting circuit for pulse frequency modwlation to control charge pump

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Embodiment Construction

[0016] A preferred embodiment of the inrush limiting and noise reducing circuit for PFM controlled charge pump of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a circuit diagram, partly a block diagram, showing the structure of an inrush limiting and noise reducing circuit for a PFM-controlled charge pump according to an embodiment of the present invention. Here, the charge pump circuit 15 includes driver circuits 5 and 5a for respectively supplying charges to the pump capacitor 4 and the output capacitor 3, gate voltage control circuits 7 and 7a for respectively driving the driver circuits 5 and 5a, a PFM control circuit 6 and Input voltage detection circuit 8.

[0017] The operation of the inrush limiting and noise reducing circuit for the PFM-controlled charge pump of this embodiment will be described in detail below with reference to FIG. 1 . When the excitation of the charge pump circuit is provided by appl...

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Abstract

An input voltage detecting circuit for detecting an input voltage is provided inside a PFM control charge pump circuit, and potential differences between potentials appearing at gate terminals and potentials appearing at source terminals are reduced by gate voltage controlling circuits for in response to a signal from the input voltage detecting circuit, suppressing gate voltages of switch transistors of a charge pump to suppress a rush current value to thereby reduce a current to prevent generation of a noise.

Description

technical field [0001] The invention relates to an inrush current limiting and noise reduction circuit for a charge pump, which is used for limiting the inrush current and reducing noise in a PFM (pulse frequency modulation) controlled charge pump circuit. Background technique [0002] So far, in the PFM controlled charge pump circuit shown in FIG. 2, the excitation of the power supply or the excitation of the charge pump circuit operation (when turned on) causes a large inrush current to flow from the input power supply to the pump capacitor or the output capacitor. Also, in the case of PFM control, even in the normal oscillation cycle, changes in the input voltage during operation increase the peak current, making the GND potential change, which becomes a source of noise. [0003] However, in a conventional PFM controlled charge pump circuit, a large inrush flow will be induced under the excitation of the power supply. Furthermore, since a change in input voltage causes a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/07G01R19/165H03K5/08H03K17/16
CPCH02M3/07H02M1/32H03K5/08G01R19/16519
Inventor 石井敏挥
Owner SII SEMICONDUCTOR CORP