Substrate mounting table, substrate processing apparatus and substrate processing method
A substrate processing method and a substrate processing device technology, which are applied in the direction of discharge tubes, electrical components, plasma, etc., can solve the problems of difficulty in generating temperature differences, poor temperature control or responsiveness, and inability to control the temperature of the substrate placing table with high precision Distribution and other issues to achieve the effect of improving temperature control and ensuring uniformity
Active Publication Date: 2008-04-16
TOKYO ELECTRON LTD
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Problems solved by technology
Therefore, even if the method described in Patent Document 1 is used to provide two systems of refrigerant flow paths and maintain a temperature difference in the substrate mounting table, heat transfer will still occur, so the temperature control performance or responsiveness will deteriorate, and Difficulty producing expected temperature differences
In other words, even if the refrigerant flow paths of the two systems are specially set, the boundary between the two areas is still unclear, and it is very difficult to quickly perform temperature adjustment due to the influence of heat transfer from the two areas, so that The temperature distribution of the substrate stage cannot be controlled with high precision
As a result, uniformity of temperature within the wafer surface and uniformity of processing cannot be fully achieved
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[0069] Preferred embodiments of the present invention will be described below with reference to the drawings.
[0070] figure 1 It is a schematic cross-sectional view of a plasma etching apparatus 100 as a substrate processing apparatus according to the first embodiment of the present invention.
[0071] The plasma etching apparatus 100 is a capacitively coupled parallel plate plasma etching apparatus, and has a substantially cylindrical chamber (processing container) 10 made of, for example, aluminum whose surface is anodized. The chamber 10 is protectively grounded.
[0072] At the bottom of the chamber 10, a cylindrical first base plate 13, a second base plate 14, and a third base plate 15 are sequentially stacked from the lower side through an insulating plate 12 made of materials such as ceramics, and The fourth base plate 16 is laminated on the third base plate 15 . These first to fourth base plates 13 , 14 , 15 , and 16 are made of, for example, aluminum, and bonded ...
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The invention discloses a base plate carrying table (17), which is characterized by the following: the cylindrical gap part (30) is installed between inner cold-producing medium chamber (28) and outboard cold-producing medium chamber (29); the distributing pipe (30a) connecting to the gap part (30) extends to the lower part of the base plate carrying table (17) which connects to the vacuum air pump (72) through valve (71); reducing the pressure to the regular vacuum state by the vacuum air pump (72) makes the gap part (30) in vacuum state and reduces the conductivity of gap part (30) for heat insulation element. The invention can improve the temperature control of base plate carrying table, which realizes the homogenization treatment in the chip surface.
Description
technical field [0001] The present invention relates to a substrate mounting table for mounting a substrate to be processed when various processes are performed on a substrate to be processed such as a semiconductor wafer, a substrate processing apparatus having the substrate mounting table, and a substrate processing apparatus using the substrate processing apparatus. A substrate processing method for processing a substrate for processing. Background technique [0002] In recent years, when manufacturing semiconductor devices, semiconductor wafers (hereinafter simply referred to as "wafers") as substrates to be processed are first placed on a substrate stage, and then the desired processing is performed one by one in this state. Monolithic processing has become mainstream. In such single-wafer processing, it is important to ensure processing uniformity within the surface of a single wafer while ensuring reproducibility of processing among multiple wafers. For example, whe...
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IPC IPC(8): H01L21/683H01L21/3065H01L21/00C23F4/00H05H1/46H01J37/32
Inventor 大桥薰速水利泰
Owner TOKYO ELECTRON LTD