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Defect detection component and detecting and producing method thereof

A defect detection and detection method technology, which is applied in semiconductor/solid-state device testing/measurement, measuring devices, instruments, etc., can solve the time-consuming defect detection process and other problems, and achieve the effect of saving time and cost and simplifying the process

Inactive Publication Date: 2008-07-16
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a detection method for defect detection components to solve the time-consuming problem of the existing defect detection process

Method used

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  • Defect detection component and detecting and producing method thereof
  • Defect detection component and detecting and producing method thereof
  • Defect detection component and detecting and producing method thereof

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Experimental program
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Embodiment Construction

[0049] figure 1 What is shown is a detection flow chart of a defect detection component according to a preferred embodiment of the present invention.

[0050] The detection method of the defect detection element of the present invention starts with forming a plurality of defect detection elements on a wafer (step 100 ), and each defect detection element is formed by stacking an insulating layer on the lower layer and a conductive layer on the upper layer.

[0051] In a preferred embodiment, the structure of the defect detection element, such as figure 2 shown, and it is located on the die of the wafer (as Figure 5Shown, 520) above. The structure is composed of a substrate 200, a defect contact 206, a spacer 204 and an insulating layer 204a. Moreover, the substrate 200 mentioned here is the above-mentioned wafer, and has a plurality of conductive structures 202 thereon. In addition, the defect contact window 206 is disposed between two adjacent conductive structures 202 ,...

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Abstract

A method for detecting component fault includes 1, forming plurality of fault detecting component on chip, wherein each fault detecting component stacked by lower insulating layer with top level conducting layer.2,configuring one fault detecting parameter, and utilizing electron beam scanning chip to obtain plurality of fault signal, confirming whether fault signal number being at least equal to fault detecting element number, if fault signal number being less than fault detecting element number then readjusting fault detecting parameter and repeating step 2-3, until fault signal number at least being equal to fault detecting element number.

Description

technical field [0001] The invention relates to a defect detection element and a detection method thereof, in particular to a defect detection element detected by electron beams and a detection method thereof. Background technique [0002] With the continuous development of VLSI technology, the integration level of integrated circuits is also increasing day by day, and tiny defects produced in the process are now the key defects affecting the quality of integrated circuits. In the past ten years, defect detection to detect defects generated in the process has become a standard step in the process, and defect detection is to use a statistical method in the process where the wafer is prone to forming defects or is particularly sensitive to defects. implemented on a sampling basis. [0003] An existing defect detection method is the trial and error method, which first sets a defect detection parameter, and performs a scanning action on the wafer, and then the operator cuts the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01N27/00
Inventor 黄兴利陈彦欣
Owner UNITED MICROELECTRONICS CORP