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Efficient luminous diode and its manufacturing method

A technology of light-emitting diodes and electrodes, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as uneconomical and complicated manufacturing processes, and achieve the effect of increasing the amount of light

Inactive Publication Date: 2008-10-22
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods require additional processes, making the entire manufacturing process complicated and uneconomical.

Method used

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  • Efficient luminous diode and its manufacturing method
  • Efficient luminous diode and its manufacturing method
  • Efficient luminous diode and its manufacturing method

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Embodiment Construction

[0017] The present invention will now be described more fully with reference to the accompanying drawings showing preferred embodiments of the invention. In the drawings, the thickness of layers and regions are exaggerated for clarity.

[0018] Referring to FIG. 2 , a light emitting diode 40 according to an embodiment of the present invention includes a plurality of components formed on a substrate 42 . Specifically, an N-type compound semiconductor layer 44 is formed on the substrate 42 . A specific region of the N-type compound semiconductor layer 44 protrudes upward by a predetermined height from the surface of the rest of the N-type compound semiconductor layer 44 . Therefore, there is a step between the protruding region 44a and the remaining region 44b of the N-type compound semiconductor layer 44 . An active layer 46 and a P-type compound semiconductor layer 48 are sequentially formed on the protruding region 44a, preferably on the entire surface of the protruding reg...

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Abstract

Provided is a light emitting diode and a method of fabricating the light emitting diode. The light emitting diode includes a substrate, an n-type compound semiconductor layer which is formed on the substrate, an active layer which is formed on the n-type compound semiconductor layer, a p-type compound semiconductor layer which is formed on the active layer, an n-type electrode which contacts the n-type compound semiconductor layer, and a p-type electrode which contacts the p-type compound semiconductor layer. Here, a surface of the active layer from which the light is emitted is a continuous curved surface. Thus, the light emission rate of the active layer can be much higher than an active layer in the conventional light emitting diode. As a result, the light which is estimated to be emitted from the light emitting diode increases, and the light is uniformly emitted in all directions. In addition, the method of the present invention is advantageous in that it is not necessary to add a separate process for forming the wave shape of the active layer.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, more specifically, to a light-emitting diode that reduces total internal reflection and improves luminous efficiency through an interface with a change in refractive index, and a manufacturing method of the light-emitting diode. Background technique [0002] In a light emitting diode, the recombination of electrons and holes in the P-N junction region of the interface between the P-type semiconductor layer and the N-type semiconductor layer produces light emission. This light emission is spontaneous emission and has no specific directionality. Therefore, light is emitted in all directions. A portion of the emitted light is absorbed by the LED due to defects in the semiconductor layer. Therefore, the light emitted at a right angle to the P-N junction region is less intense than the light emitted along the interface of the P-N junction region. [0003] figure 1 A conventional light emitting...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02
CPCH01L33/22
Inventor 赵济熙孙哲守陈暎究
Owner SAMSUNG ELECTRONICS CO LTD