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Tantalum carbide-covered carbon material and process for producing the same

A technology of tantalum carbide and carbon materials, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of reduced softness, easy cracks, and shortened life of carbon materials, so as to achieve inhibition of release, Effect of reducing corrosion, reducing cracks and peeling

Active Publication Date: 2009-01-14
TOYO TANSO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the highly crystalline coating film obtained by the CVD method has a columnar structure, which reduces flexibility and tends to cause cracks.
Ammonia or hydrogen corrodes carbon materials through cracks, shortening the life of carbon materials

Method used

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  • Tantalum carbide-covered carbon material and process for producing the same
  • Tantalum carbide-covered carbon material and process for producing the same
  • Tantalum carbide-covered carbon material and process for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～3

[0107] Set the coefficient of thermal expansion to 7.8×10 -6 / K, 1000 ℃ base gas release pressure is 10 - 6 A graphite substrate with a diameter of 66 mm and a thickness of 10 mm in Pa / g and an ash content of 2 ppm was subjected to the above-mentioned halogen treatment, and then a tantalum carbide coating film was formed on the carbon substrate under the CVD conditions in Table 1 below. At this time, the composition ratio of C / Ta of the coating film passes C 3 h 8 The flow rate is adjusted to 1.0~1.2. Using the CVD conditions shown in Table 1, the film thickness was changed to 21, 34, 44 μm by changing the reaction time to 11, 18, 25 hours. Then, heat treatment was further performed at 2000° C. for 10 hours in a hydrogen atmosphere to further improve the crystallinity of the coating film 3 . The X-ray diffraction result of embodiment 1~3 is as Figure 15 ~ Figure 17 shown. In X-ray diffraction, the diffraction lines of the (220) plane were mainly confirmed, and the diff...

Embodiment 4～8

[0114] On the same carbon substrate 1 as used in Examples 1 to 3, a tantalum carbide coating film 3 was formed by a CVD method. The CVD conditions are as follows: the temperature is fixed at 850°C, the pressure is fixed at 1330Pa, and the C 3 h 8 and TaCl 5 The flow rate changes the growth rate of tantalum carbide in the range of 1-30μm / hr. In Examples 4 to 6, after the coating film 3 was formed, heat treatment was performed at 2000° C. for 10 hours in a hydrogen atmosphere. The obtained crystal structure of the coating film 3 was detected by X-ray diffraction. As a result, the intensity ratio of the (220) plane diffraction line was the strongest, which was 4 times or more the intensity of the second strongest diffraction line. As shown in Table 3, the half value width of the diffraction line of the (220) plane of the coating film 3 is in the range of 0.11° to 0.14°. It is preferable that such a coating film does not cause cracks or peeling before the thermal shock resista...

Embodiment 9～18

[0119] Carbon materials 100 were produced using various graphite substrates 1 having the properties shown in Table 4. The above-mentioned halogen treatment was performed on graphite substrates having a diameter of 60 mm and a thickness of 10 mm having various coefficients of thermal expansion (CTE) shown in Table 4, so that the ash content of the graphite substrate was 10 ppm or less. However, in Example 18, this halogen treatment was omitted, and the ash content of the graphite substrate 1 was 16 ppm. A tantalum carbide coating film 3 (thickness: 43 μm) was formed on the substrate under the same conditions as in Examples 1 to 3. The composition ratio of C / Ta of coating film 3 is determined by C 3 h 8 The flow rate is adjusted to 1.0-1.2. After the coating film 3 was formed, heat treatment was performed at 2000° C. for 10 hours in a hydrogen atmosphere. In the coating films of Examples 9 to 18, the (220) planes all show the strongest diffraction intensity, which is 4 times...

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Abstract

This invention provides a tantalum carbide-covered carbon material, which has excellent corrosion resistance to reducing gases and thermal shock resistance at high temperatures, and a process for producing the same. The tantalum carbide-covered carbon material comprises a carbon base material and a covering film provided on the carbon base material directly or through an intermediate layer. The covering film is formed of a large number of densely aggregated fine crystals of tantalum carbide. Preferably, the covering film exhibits such an X-ray diffraction pattern that the diffraction intensity based on (220) face of tantalum carbide is the highest intensity. More preferably, this diffraction intensity is not less than four times higher than the second highest diffraction intensity.

Description

technical field [0001] The invention relates to a tantalum carbide coated carbon material and a manufacturing method thereof. More specifically, it relates to a tantalum carbide-coated carbon material usable as a component of a device for forming a single crystal of compound semiconductors such as SiC and GaN, and a method for producing the same. Background technique [0002] Conventionally, in the production of single crystals for semiconductors such as Si, GaN, and SiC, CVD apparatuses called MOCVD and MOVPE or MBE apparatuses for epitaxial growth have been used. In the production of SiC, a sublimation method, an HTCVD method (high temperature CVD method), etc. that require a high temperature of 1500° C. or higher, especially 1800° C. or higher, are often used. In the production of these single crystals for semiconductors, hydrogen gas, ammonia gas, hydrocarbon gas, etc. are generally used as carrier gas or source gas. [0003] At a high temperature of 800° C. or higher,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/87C23C16/32C04B41/89C23C16/56
Inventor 藤原广和山田典正阿部纯久
Owner TOYO TANSO KK