Low temp sintered ZnO multilyer pressure sensitive resister and manufacturing method thereof

A varistor, low-temperature sintering technology, applied in varistor cores, resistance manufacturing, varistors, etc., can solve the problems of low cost, high cost, and poor reliability of varistors, and achieve production saving Steps, low cost, and the effect of improving efficiency

Inactive Publication Date: 2009-04-22
广州新日电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The firing temperature of the traditional ZnO chip multilayer varistor porcelain exceeds 1150°C, so it is necessary to use expensive electrode paste with high content of precious metals such as silver palladium and silver platinum, and the cost is high
Low-temperature sintered chip multilayer varistors with pure silver internal electrodes are low in cost but poor in reliability

Method used

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  • Low temp sintered ZnO multilyer pressure sensitive resister and manufacturing method thereof
  • Low temp sintered ZnO multilyer pressure sensitive resister and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 1 structure shown, figure 2 The manufacturing method flow shown, and according to the formula table 1, accurately weigh various materials, put the weighed materials into a high-efficiency ball mill, add an appropriate amount of deionized water and zirconium balls, and ball mill for 12 hours to obtain an average particle size of 0.4 micron material. Put the ball-milled material in a stainless steel tray and dry it at about 120°C for 10 hours, then add an appropriate amount of prepared adhesive, and then ball-mill for 24 hours to make a uniform and stable casting slurry, and then cast the film tape, and slightly press the film tape to obtain a film tape protective layer a with a thickness of 45 microns, and print an alloy internal electrode b with a weight ratio of 95% silver and 5% palladium on the film tape protective layer a, and then dislocate after lamination Print another layer of internal electrodes until the effective layer c is 6 layers, cut out...

Embodiment 2

[0044] Accurately weigh various materials according to formula table 2. Put the weighed material into a high-efficiency ball mill, add an appropriate amount of deionized water and zirconium balls, and ball mill for 12 hours to obtain a material with an average particle size of 0.2 microns. Put the ball-milled material in a stainless steel tray and dry it at about 120°C for 10 hours, then add an appropriate amount of prepared binder, and then ball-mill for 24 hours to obtain a uniform and stable casting slurry. Cast out the film tape, and slightly press the film tape to obtain a film tape protective layer with a thickness of 15 microns. Print an alloy internal electrode with a weight ratio of 90% silver and 10% palladium on the protective layer of the film tape, and then print another layer of internal electrodes in dislocation after lamination until the effective layer is 6 layers. After hydrostatic pressure, cut out green bodies with a size of 04×02 (inches), put these green...

Embodiment 3

[0048] Accurately weigh various materials according to formula table three. Put the weighed material into a high-efficiency ball mill, add an appropriate amount of deionized water and zirconium balls, and ball mill for 12 hours to obtain a material with an average particle size of 0.10 microns. Put the ball-milled material in a stainless steel tray and dry it at about 120°C for 10 hours, then add an appropriate amount of prepared binder, and then ball-mill for 24 hours to obtain a uniform and stable casting slurry. The film tape was flow cast, and the film tape was slightly pressed to obtain a film tape protective layer with a thickness of 55 microns. Print an alloy internal electrode with a weight ratio of 96% silver and 4% palladium on the protective layer of the film tape, and print another layer of internal electrodes in dislocation after lamination until the effective layer is 6 layers. After hydrostatic pressure, cut out green bodies with a size of 04×02 (inches), put t...

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Abstract

The piezoresistor is fabricated by agglutinating interleaved ZnO porcelain and inner electrode. Main material of the ZnO porcelain is ZnO powder in sub micro of average particle diameter 0.10-0.99 micro. The inner electrode layer is made from palladium and argentine, and palladium is in 3-10% (Wt%) and argentine is in 990-97%. Agglutinating temp is 900-980 deg.C. The invention also discloses method for manufacturing the piezoresistor.

Description

technical field [0001] The invention relates to a chip multilayer varistor, in particular to a low-temperature sintered ZnO multilayer chip varistor; the invention also relates to the manufacture of the low-temperature sintered ZnO multilayer chip varistor method. Background technique [0002] In the existing technology, varistors can be divided into high-temperature firing and low-temperature firing according to the sintering temperature: high-temperature firing is 1150°C to 1250°C; low-temperature firing is a low-temperature section around 900°C. The inner electrode used in high temperature sintering is 70% silver-30% palladium inner electrode, even if pure palladium or pure platinum inner electrode is used, the content of noble metal is relatively high, the cost of inner electrode is high, and thus the production cost is high. Low-temperature firing is practical for pure silver internal electrodes, and the cost is relatively low, but the poor compactness of the porcelain...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/112H01C17/30
Inventor 钟明峰
Owner 广州新日电子有限公司
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