Resistance crosspoint storage array with charge injection differential read-out amplifier

Abstract

A data storage device (8) is disclosed comprising an array (10) of resistive cross-point memory cells (12), a plurality of word lines (14), a plurality of bit lines (16) and an injection charge amplifier (30) The sense amplifier (24). The storage units (12) are arranged in groups (15) of one or more storage units. The injected charge amplifier (30) determines whether the sensed memory cell is in the first or second resistance state by comparing with a reference cell.

Description

technical field [0001] The present invention relates generally to resistive cross point memory cell arrays, and more particularly, the present invention relates to resistive cross point memory cell arrays with differential sense amplifiers using a charge injection mode. Background technique [0002] Many arrays of resistive cross-point memory cells have been proposed, including those with magnetic random access memory (MRAM) elements, phase-change memory elements, polysilicon memory Array of resistive cross-point memory cells for storage elements. [0003] A typical MRAM memory device includes, for example, an array of memory cells. Word lines may extend along rows of memory cells and bit lines may extend along columns of memory cells. Each memory cell is located at the intersection of a word line and a bit line. Each MRAM memory cell stores information bits in the form of magnetization direction. Specifically, the magnetization of each memory cell exhibits one of two st...

AI Technical Summary

Problems solved by technology

However, equipotential isolation is often difficult to implement in large arrays

Autoscale and triple sample read techniques have been used to read data in large MRAM arrays using equipotential isolation techniques, but these readout processes typically limit the readout time to a few microseconds

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