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Microelectronic mechanical system probe card equipment and method based on elastic substrate

A micro-electronic machinery and substrate technology, applied in the direction of single semiconductor device testing, measuring device casing, etc., can solve problems such as failure stress, unbearable probe size, and many process steps, achieving low cost, expanded adaptability, and simple process. Effect

Inactive Publication Date: 2009-05-13
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But because all probes on a thin-film probe must contact the chip at the same time under a single stress, it becomes a serious problem as the complexity of the chip and the number of contact points increase
Younghak Cho et al. in "Si-based microprobe card with shape knife-edged tips combined metal deposition" (The 12 th International conference on solid sensors and microsystems, Boston, June 8-12, 2003) reported a cantilever beam probe structure made by silicon micromachining technology, but the main problem of this type of MEMS probe is that the size of the probe continues When reduced, it cannot bear and produce the stress required to destroy the natural oxide layer or contamination layer on the surface of the metal pin
A simple-supported beam microelectromechanical system probe and its preparation method (patent application number: 200610117283.3) applied by Jing Xiangmeng and others, which are prepared on glass or silicon wafer substrates by using UV-LIGA multiple photolithography and electroforming processes The elastic metal probe adopts a simply supported beam structure instead of a traditional cantilever beam structure, which can withstand and generate greater stress. The signal is led from the probe to the periphery by electroplating metal circuit leads, and connected by spot welding To the PCB board, it is convenient for the maintenance and replacement of the probe, but this technology has many steps

Method used

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  • Microelectronic mechanical system probe card equipment and method based on elastic substrate
  • Microelectronic mechanical system probe card equipment and method based on elastic substrate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Probe structure parameters: glass substrate, polydimethylsiloxane thickness 100 μm, polyimide thickness 100 μm, copper circuit leads, probe diameter 20 μm, probe height 20 μm.

[0021] Preparation methods such as figure 2 Shown:

[0022] (1) Elastic substrate preparation

[0023] A glass sheet with a thickness of 2 mm was used as the substrate 1, and the substrate was firstly treated by ultrasonic cleaning with acetone, alcohol and deionized water, and dried in a vacuum oven at 180° C. for 3 hours. Then spin-coat polydimethylsiloxane 2 with a thickness of 100 μm on the substrate at a speed of 1000 rpm, cure at 80° C. for 2 hours, then spin-coat polyimide 3 with a thickness of 100 μm at a speed of 1000 rpm, Curing was carried out at 250°C for 2 hours.

[0024] (2) Metal circuit lead production

[0025] First, sputter a 100nm Cr / Cu metal base film 4 on the surface of polyimide, spin-coat positive resist AZ4620 with a thickness of 7 μm, and expose it with the MA6 phot...

Embodiment 2

[0032] Probe structure parameters: glass substrate, PDMS thickness 200 μm, polyimide thickness 50 μm, copper circuit leads, probe diameter 50 μm, probe height 40 μm.

[0033] (1) Elastic substrate preparation

[0034] A glass sheet with a thickness of 2 mm was used as the substrate, and the substrate was firstly treated: ultrasonically cleaned with acetone, alcohol and deionized water, and dried in a vacuum oven at 180°C for 3 hours. Then spin-coat polydimethylsiloxane with a thickness of 200 μm on the substrate at 600 rpm, and cure it at 85° C. for 2 hours, then spin-coat polyimide with a thickness of 50 μm at 2000 rpm, at 250 Cure for 2 hours.

[0035] (2) Metal circuit lead production

[0036] First, sputter a 100nm Cr / Cu metal base film on the polyimide surface, spin-coat a positive resist AZ4620 with a thickness of 7 μm, and expose it with an MA6 photolithography machine from Karl Suss Company in Germany. The exposure time is 50 seconds, and the development time is 60 s...

Embodiment 3

[0043] Probe structure parameters: silicon substrate, PDMS thickness 500 μm, polyimide thickness 50 μm, gold circuit leads, probe diameter 5 μm, probe height 20 μm.

[0044] (1) Elastic substrate preparation

[0045] A silicon wafer with a thickness of 1mm was used as the substrate, and the substrate was firstly treated: ultrasonically cleaned with acetone, alcohol and deionized water, and dried in a vacuum oven at 180°C for 3 hours. Then spin-coat polydimethylsiloxane with a thickness of 500 μm on the substrate at 200 rpm, and cure at 90° C. for 2 hours, then spin-coat polyimide with a thickness of 50 μm at 2000 rpm, at 250 Cure at 2 hours.

[0046] (2) Metal circuit lead production

[0047] First, sputter a 100nm Cr / Cu metal base film on the surface of polyimide, spin-coat positive resist AZ4620 with a thickness of 7 μm, and expose it with an MA6 photolithography machine from Karl Suss Company in Germany. The exposure time is 50 seconds, and the development time is 60 seco...

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Abstract

The invention relates to a probe-card preparation method for MEMS based on elastic basement. By adopting secondary lithography and electroforming technology poly (dimethylsiloxane) and polyimide are coated on the surface of glass or silicon chip to constitute the elastic basement, which is used to take the place of cantilever beam and simple supported beam at present to bear and generate bigger impaling oxide film stress and adjust probe displacement by changing thickness of elastic basement. Circuit lead wire is set on the elastic basement. Probes are located at the top of circuit lead wire and are arranged in array according to pin positions of testing chip. Probe pinpoints are corresponded with corresponding pin positions of chip. The bottom end of probe is circuit lead wire obtained by electroforming. Circuit lead wires are connected with periphery of probe card from probe bottom ends. The periphery is connected on the corresponding printed circuit board by spot welding so that signal circuit from probe to testing machine station is connected. Probe card prepared by the invention is provided with simple process, high yield, very high overlay accuracy and bigger bearing stress.

Description

technical field [0001] The invention relates to a method for preparing a micro-electromechanical system probe card based on an elastic substrate. The prepared probe card is used for integrated circuit chip testing and belongs to the technical field of integrated circuit testing. Background technique [0002] The semiconductor wafer test is to check the ideal working state of the wafer and the integrated circuit on the wafer by performing electrical performance tests including short circuit and open circuit on the wafer and the integrated circuit on the wafer in the uncut state, so as to be able to Find ways to increase yield, reduce chip manufacturing costs, and improve chip functionality. With the development of VLSI technology to greater integration and higher speed, the number of input / output (Input / Output) has increased sharply, and the size and spacing of chip pins have been reduced accordingly. In this way, not only the manufacturing technology is very important, but ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R1/04G01R31/26
Inventor 陈迪靖向萌陈翔朱军刘景全
Owner SHANGHAI JIAOTONG UNIV