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Substrate processing apparatus

A substrate processing device and substrate technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inability to accurately measure the concentration of processing gases, and achieve the effects of preventing temperature drop, inhibiting condensation, and accurate concentration

Active Publication Date: 2009-06-24
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, there is the following problem: when using a high-concentration processing gas, the concentration of the processing gas cannot be accurately measured because the concentration of the processing gas exceeds the measurable range of the concentration meter.

Method used

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  • Substrate processing apparatus
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Embodiment Construction

[0036] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

[0037]

[0038] figure 1 It is a block diagram showing the configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. This substrate processing apparatus 1 is an apparatus that immerses a plurality of substrates W (hereinafter abbreviated as substrates W) in pure water together to clean the substrates W, and then passes around the substrate W lifted out of the pure water. The substrate W is dried by supplying IPA gas. Such as figure 1 As shown, the substrate processing apparatus 1 mainly includes a processing chamber 10 , a nitrogen gas supply source 20 , a first piping unit 30 , an IPA gas generating unit 40 , a second piping unit 50 , a concentration measuring unit 60 , and a control unit 80 .

[0039] The processing chamber 10 is a housing having a processing space for cleaning and drying the substrate W th...

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Abstract

The present invention relates to a substrate processing apparatus in which a concentration measuring unit of the substrate processing apparatus dilutes a sample gas by mixing a sample gas and nitrogen gas, and measures the concentration of IPA gas contained in the diluted sample gas. Then, the measured concentration value (C1) is multiplied by the reciprocal (1 / P) of the dilution rate obtained based on the flow rates of the sample gas and the dilution gas, and the concentration of the IPA gas contained in the sample gas before dilution ( C0) was calculated as C0=C1×(1 / P). Therefore, even when high-concentration IPA gas is used, the concentration of IPA gas can be accurately measured.

Description

technical field [0001] The present invention relates to a substrate processing apparatus for performing drying processing or other processing on substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, and glass substrates for PDPs, using processing gas supplied into a processing chamber together with a carrier gas. Background technique [0002] Conventionally, in the manufacturing process of a substrate, there is known a substrate processing apparatus that processes a substrate by supplying a processing gas around the substrate. For example, there is known a substrate processing apparatus that dries a substrate by supplying IPA (isopropanol) gas around the cleaned substrate. A processing gas such as IPA gas is sent into the processing chamber using an inert gas such as nitrogen as a carrier gas. [0003] In such a substrate processing apparatus, depending on the concentration of the processing gas, the processing effects such as drying ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/30H01L21/66H01L21/67H01L21/304
Inventor 尾崎秀彦
Owner DAINIPPON SCREEN MTG CO LTD