Solid-state image pickup device, method of driving same and imaging apparatus
A technology of solid-state image pickup and image pickup, which is applied in image communication, electric solid-state devices, television, etc., and can solve problems such as increased circuit size
Inactive Publication Date: 2009-07-15
SONY CORP
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Problems solved by technology
[0029] However, in the former technique, in order to correct the signal before A / D conversion by the A / D conversion circuit 208, a circuit for correcting the signal, such as a constant voltage circuit, is required in addition to the light level detection circuit 207, so since avoiding The circuit of the blackening phenomenon, the size of the circuit increases
[0030] In the latter technique, in order to correct the value of the memory 209, since a conversion circuit 210 for inserting a correction signal into the memory 209 is required in addition to the light level detection circuit 207, the circuit size for avoiding the blackening phenomenon Increase
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[0053] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0054] Figure 9 is a block diagram showing the configuration of a solid-state image pickup device according to an embodiment of the present invention, for example, a solid-state image pickup device (such as a CMOS image sensor) on which ADCs are mounted in parallel in columns, in which a configuration is configured for each column of a matrix-shaped pixel array Analog-to-digital converter (abbreviated as ADC below).
[0055] exist Figure 9 , unit pixels 11 include photoelectric conversion elements such as photodiodes and pixel transistors (amplification transistors within pixels), and the unit pixels 11 are two-dimensionally arranged in a matrix (n×m), constituting the pixel array section 12 . The unit pixel 11 may include, for example figure 1 The four transistors shown. However, the unit pixel of the present invention is not limited to these four...
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There is provided a solid-state image pickup device including: a pixel array portion which includes a plurality of unit pixels each having a photoelectric conversion element and an output transistor for outputting a signal according to charge obtained by photoelectric conversion of the photoelectric conversion element; a comparing portion which compares the signal output from each of the unit pixels with a ramp-shaped reference signal; a measuring portion which starts an operation in synchronization with the supply of the reference signal to the comparing portion, performs the operation until the comparison output of the comparing portion is inverted, and measures a time until the comparison of the comparing portion is finished; and a detecting portion which detects a predetermined image pickup condition and fixes the comparison output of the comparing portion to a state before the comparison starts when the image pickup condition is detected.
Description
[0001] Related Application Cross Reference [0002] The present invention is related to subject matter of Japanese Patent Application JP2005-219844 filed in Japan Patent Office on Jul. 29, 2005, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state image pickup device, a method of driving the solid-state image pickup device, and an imaging apparatus. Background technique [0004] A solid-state image pickup device such as a charge coupled device (CCD) type image sensor or a complementary metal oxide semiconductor (CMOS) type image sensor is widely used as an image pickup device mounted on a mobile terminal such as a mobile phone, or An image input device (image pickup device) of an imaging device such as a digital still camera or a digital video camera, which is formed as one chip or module. [0005] figure 1 is a circuit diagram showing a configuration example of a pixel portion of a general...
Claims
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IPC IPC(8): H04N5/335H04N25/00
CPCH01L27/14609H04N5/378H04N5/3598H04N25/627H04N25/78H04N25/75
Inventor 安井幸弘村松良德
Owner SONY CORP