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Carbon ribbon to be covered with a thin layer made of a semiconductor material and method for depositing a layer of this type

A semiconductor and material layer technology, applied in the direction of semiconductor devices, metal material coating process, coating, etc., can solve the problems of manufacturing drawing structure and drawing operation complexity

Inactive Publication Date: 2009-08-19
SOLARFORCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These solutions complicate the fabrication of the drawn structure and the drawing operation itself

Method used

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  • Carbon ribbon to be covered with a thin layer made of a semiconductor material and method for depositing a layer of this type
  • Carbon ribbon to be covered with a thin layer made of a semiconductor material and method for depositing a layer of this type
  • Carbon ribbon to be covered with a thin layer made of a semiconductor material and method for depositing a layer of this type

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Experimental program
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Embodiment Construction

[0025] In the present invention, in order to increase the thickness of the layer of semiconductor material deposited on the edge of the ribbon, the edge of the carbon ribbon has a modified shape so as to modify the shape of the wetting surface of the molten semiconductor material on both edges of the ribbon.

[0026] Figure 3a , 3b , 3c and 3d are schematic cross-sectional views showing various embodiments of the carbon ribbon according to the present invention. To simplify writing and reading the following, when referring to e.g. R, involves Figure 3a , 3b , 3c, and 3d, then write them as Ra, b, c, d instead of Ra, Rb, Rc, Rd. For example, if reference R applies only to Figure 3b , 3c and 3d, then write it as 3b,c,d.

[0027] In the figure, a tape is shown coated with two layers of semiconductor, each of which forms a semiconductor film after removal of the carbon tape. A median plane 50a, b, c, d passing through the center of the strip and perpendicular to the two ...

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Abstract

The invention relates to a carbon ribbon (54) to be covered by a thin layer (72 or 74) made of semiconducting material, and to a method for depositing said type of layer on a substrate made of carbon ribbon method. Essentially, a layer of semiconducting material (72, 74) will cover at least two sides (58, 60) of the carbon ribbon when the ribbon is passed vertically and upwardly in the melt (12) of molten semiconducting material side. According to the invention, two edges of at least one of said two sides of said ribbon are protruded to form a spoiler (68, 70, 98, 100).

Description

technical field [0001] The invention relates to a carbon ribbon intended to be covered with a thin layer of semiconducting material and to a method for depositing such a layer on a substrate of carbon ribbon. Background technique [0002] Photovoltaic cells consist of thin sheets of semiconductor material, the most widely used material currently being polysilicon. More specifically, the invention is applicable to drawing silicon ribbons used in the manufacture of photovoltaic cells, therefore, the following description refers to silicon, it being understood that the invention is equally applicable to other semiconductor materials such as germanium and Melting (congruent or quasi-congruent melting) GaAs group III-V type semiconductor compound. The silicon plate is obtained from the silicon layer forming the film deposited on the carbon substrate, preferably by drawing the substrate through a bath of molten silicon. The base has the form of a strip. [0003] figure 1 is an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C2/00
CPCH01L31/1852C23C2/006H01L31/182Y02E10/546Y02E10/544Y02P70/50C23C2/00361
Inventor C·贝洛特
Owner SOLARFORCE