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Hub, memory module, memory system and methods for reading and writing to the same

A memory module and memory system technology, applied in static memory, single semiconductor device testing, instrumentation, etc., can solve the problem of no module selection bit identification

Inactive Publication Date: 2009-09-09
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

All other memory modules MM2-MMn do not perform write operations because they are not identified by the module select bits

Method used

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  • Hub, memory module, memory system and methods for reading and writing to the same
  • Hub, memory module, memory system and methods for reading and writing to the same
  • Hub, memory module, memory system and methods for reading and writing to the same

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Embodiment Construction

[0057] Figure 8 A memory system according to an embodiment of the present invention is described. Such as Figure 8 As shown, the memory system 100 may include a memory controller 600 , a clock source 610 , and a plurality of memory modules 500 . Each memory module 500 may also include multiple memories, eg, multiple DRAMs 520 and one or more central units 510 .

[0058] In the downstream direction, the memory controller 600 may transmit southbound data packets to the plurality of memory modules 500, the southbound data packets including data, control, and / or address information 10, and the memory controller 600 may transmit in the downstream direction, from the plurality of The memory module 500 receives northbound packet data 14 . The memory controller 600 can also communicate with the plurality of memory modules 500 via the SMBus. The clock source 610 may provide a clock such as ECLK1 to the memory controller 600 and / or the plurality of memory modules 500 .

[0059] e...

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PUM

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Abstract

A central unit, a memory module, a memory system and methods for reading and writing the same. In the test mode, memory module, memory device, or memory cell identification information can be ignored, so that all memory modules, memory devices, or memory cells can be tested for write or read. Ignoring memory identification information may allow all memory modules, memory devices, or memory cells to be written or read at the same time, thereby reducing test time.

Description

technical field [0001] The present invention generally relates to a central unit, a memory module, a memory system and methods of reading and writing thereto. Background technique [0002] figure 1 Several conventional memory module types are described, including single inline memory modules (SIMMs) and dual inline memory modules (DIMMs). SIMMs have memory slices on one side of the memory module, where DIMMs have memory slices on both sides of the memory module. DIMM can also be defined as registered DIMM (R-DIMM) and fully buffered DIMM (FBDIMM). [0003] In R-DIMMs, signals other than data signals are transferred from the memory controller to the memory slices via one or more registers. In FBDIMMs, all signals from the memory controller are routed to the memory slices through a central unit (hub) or advanced memory buffer (AMB). Such as figure 1 As shown, FBDIMMs are advantageous for higher speed and / or higher density applications. [0004] figure 2 A conventional ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/37G11C29/00G01R31/26H01L21/66
CPCG01R31/2844G11C29/56G11C2029/5602
Inventor 李起薰
Owner SAMSUNG ELECTRONICS CO LTD