Method for adjusting compositions of developing solution, and developing system
A developing system and developing solution technology, applied in the field of developing systems, can solve the problems of low photoresist composition in the developing solution, affecting the developing effect, etc., and achieve the effect of simple photoresist concentration and improving yield rate
Inactive Publication Date: 2009-10-28
AU OPTRONICS CORP
View PDF5 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
For example, when developing the photoresist pattern of the via (via), since the photoresist pattern of the via (via) is simple, the photoresist material washed out is very little. The composition will be too low, which will affect the developing effect
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] refer to figure 1 , which shows that the developing system 1 of the present invention includes a first developing machine 100 and a second developing machine 200 . The first developing unit 100 includes a first developing tank 110, a first developing solution collecting pipe 111, a first developing solution circulating tank 120, a first developing solution supply pipe 121, a first pump 122, a first The photoresist concentration sensor 123 , a first waste liquid pipe 131 and a first waste liquid control valve 132 . The second developing unit 200 includes a second developing tank 210, a second developing solution collecting pipe 211, a second developing solution circulating tank 220, a second developing solution supply pipe 221, a second pump 222, a second developing solution The photoresist concentration sensor 223 , a second waste liquid pipe 231 and a second waste liquid control valve 232 .
[0047] The first developing tank 110 communicates with the first developing...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A developing system includes a first developing machine, a second developing machine, a connecting pipe and a waste liquid tank. The first developing unit includes a first developing tank, a first developing solution circulation tank, a first waste liquid pipe and a first waste liquid control valve, the first developing tank communicates with the first developing solution circulating tank, the The first waste liquid pipe is connected to the first developing liquid circulation tank, and the first waste liquid control valve is arranged on the first waste liquid pipe. The second developing machine includes a second developing tank, a second developing solution circulation tank, a second waste liquid pipe and a second waste liquid control valve, the second developing tank communicates with the second developing solution circulating tank, the The second waste liquid pipe is connected to the second developing solution circulation tank, and the second waste liquid control valve is arranged on the second waste liquid pipe. The communication pipe communicates with the first developer solution circulation tank and the second developer solution circulation tank. The waste liquid tank is connected with the first waste liquid pipe and the second waste liquid pipe.
Description
Technical field: [0001] The invention relates to a developing system, in particular to a developing system capable of controlling the photoresist concentration in the developing solution. Background technique: [0002] In the development process, the photoresist component in the developer (the photoresist material washed out from the photoresist pattern during the development process) has a direct relationship with the development effect of the developer. When the photoresist concentration in the developer is too low, the developing effect of the developer will be reduced, and the photoresist pattern cannot be accurately developed. Since the photoresist patterns to be processed in each manufacturing process are different, and since the photoresist components in the developer come from the photoresist materials washed out from the photoresist patterns during the development process, different manufacturing The photoresist concentration of the developer solution in the proces...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/30G03F7/26
Inventor 李易昌林奇峰徐启源
Owner AU OPTRONICS CORP