Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate

A technology for plasma and processing vessels, applied in the field of plasma processing devices, can solve the problems of dielectric plate damage, poor thermal expansion rate, reduced efficiency and the like

Inactive Publication Date: 2009-11-18
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the conventional plasma processing apparatus, at the contact portion between the dielectric plate and the metal processing container, particles such as friction and cutting of the metal container are generated due to the difference in thermal expansion coefficient between the two.
In the worst case, damage such as breakage of the dielectric plate occurs
In addition, partial discharge occurs at the electric field boundary portion at the edge of the dielectric plate, which not only damages the metal container, but also reduces the efficiency of plasma processing such as oxide film formation.

Method used

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  • Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate
  • Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate
  • Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate

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Embodiment Construction

[0010] figure 1 A schematic configuration of the plasma substrate processing apparatus 10 used in the present invention is shown. The plasma processing apparatus 10 has a processing container 11 including a substrate holding table 12 holding a silicon wafer W serving as a substrate to be processed. The gas in the processing container 11 is exhausted from the exhaust ports 11A and 11B through an exhaust pump (not shown). The substrate holding table 12 has a heating function for heating the silicon wafer W. As shown in FIG.

[0011] On the device upper side of the processing container 11 , an opening is provided corresponding to the silicon wafer W on the substrate holding table 12 . The opening is made of quartz or Al 2 o 3 The formed dielectric plate 13 is clogged. On the upper portion (outer side) of the dielectric plate 13, the slot plate 14 functioning as an antenna is arranged. A dielectric plate 15 made of quartz, alumina, aluminum nitride, or the like is arranged o...

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Abstract

An object of the present invention is to minimize damage to a dielectric plate support portion and a metal container and to improve plasma processing efficiency. In the present invention, the resin layer is arranged in the facing area of ​​the dielectric plate and the processing container, thereby, particles and damages caused by the difference in thermal expansion coefficient between the dielectric plate and the metal processing container can be suppressed, and the The occurrence of partial discharge on the electric field boundary part such as the edge part of the film improves the plasma treatment efficiency of oxide film formation.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for processing a semiconductor substrate with plasma, and more particularly to the structure of a processing container and a dielectric plate used in the plasma processing apparatus. Background technique [0002] In recent years, the development of processing technology for semiconductor substrates using plasma has been remarkable. Plasma treatment has advantages such as that the treatment temperature can be significantly lowered compared with the prior art. A plasma processing apparatus generally includes: a processing container for storing a semiconductor substrate; an electromagnetic wave supply unit for supplying electromagnetic waves to the processing container; and a dielectric plate (dielectric window) arranged between the electromagnetic wave supply unit and the processing container. In the apparatus configured in this way, mixed gases corresponding to different processes are intro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H05H1/46C23C16/511B01J19/08H01J37/32H01L21/00
CPCH01L21/67069H01J37/32458H01L21/31H05H1/46
Inventor 森田治
Owner TOKYO ELECTRON LTD
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