Method for suppressing plasma unstable

Abstract

The method comprises: adding the electropositive plasma gas into the raw material gas which contains the electronegative plasma gas and is provided for the plasma generator to make the electronic density of the plasma generated in the plasma generator increased; wherein, the addition of electropositive plasma gas makes the generated plasma stable.

Description

technical field [0001] The invention relates to the field of plasma-assisted material processing, in particular to a method for controlling the stability of high-density plasma in the field of plasma-assisted integrated circuit manufacturing. Background technique [0002] Plasma instability exists in plasma-assisted material processing systems such as low-pressure high-density plasma (HDP) systems commonly used in the manufacture of semiconductor integrated circuits. Under certain conditions, the characteristic parameters of the plasma, such as the density of plasma ions and electrons, and the velocity distribution of plasma ions and electrons, change unstable, which often leads to narrow plasma processing windows and out-of-control processing quality in the semiconductor integrated circuit manufacturing process. [0003] As the design rule of large-scale semiconductor integrated circuit manufacturing becomes smaller and smaller, the control of finer line width, etching anis...

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Problems solved by technology

[0007] The present inventor has carried out in-depth research on the above-mentioned plasma instability phenomenon, and proposed a method for suppressing plasma instability, which can not only stabilize the plasma efficiently, but also overcome the cost increase and complicated operation in the above-mentioned prior art Shortcomings