A method of preparation of an epitaxial substrate

Abstract

The invention relates to a method of preparation of an epitaxial substrate, in particular a GaN, a SiGe, AlN or InN epitaxial substrate. It is the object of the present invention to provide a process of preparation of an epitaxial substrate which further reduces the influence of the substrate while being at the same time economically viable. The object is solved by providing a base substrate, implanting atomic species in the base substrate to create a weak layer like zone, providing an epitaxial stiffening layer on a surface of a base substrate at a first temperature and isolating the stiffening layer at a second higher temperature, in particular together with a sub-layer of the base substrate, from the remainder of the base substrate, whereby the isolated material creates a pseudo substrate on which a homo-or heteroepitaxial layer is provided.

Description

technical field [0001] The invention relates to a method for preparing an epitaxial substrate, especially a method for preparing a GaN, SiGe, AlN or InN epitaxial substrate, and electronic devices manufactured on or in the epitaxial substrate. Background technique [0002] Epitaxy is the process by which crystalline layers of material are deposited on a substrate that is also crystalline. Epitaxial growth is characterized in that the crystal structure of the substrate can be replicated in the epitaxial layer of the grown material. Consequently, defects in the substrate are usually replicated into the epitaxial layer as well. Epitaxial layers are generally applied in electronic or optoelectronic applications. Of particular interest are e.g. gallium nitride epitaxial layers, which are used in blue, violet or ultraviolet laser diodes due to their large band gap. [0003] Epitaxy techniques can basically be divided into two categories. The first type is homoepitaxial, in whi...

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Problems solved by technology

[0008] These two methods overcome the aforementioned problems to some extent; however, negative effects cannot be excluded due to the presence of the original substrate, which requires additional processing steps when the presence of the original substrate is not compatible with the application of growing epitaxial layers to remove the original substrate, resulting in higher production costs

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