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Backside illuminated sensing device and method for manufacturing same

A light-sensing, backside technology that can be used in radiation control devices, electrical components, semiconductor/solid-state device manufacturing, etc., and can solve problems such as shallow effective absorption depths

Active Publication Date: 2010-02-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the problem faced by the backside light sensor is that the sensed radiation will experience different effective absorption depths in the substrate due to different wavelengths, for example, blue light will experience a shallower effective absorption depth than red light

Method used

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  • Backside illuminated sensing device and method for manufacturing same
  • Backside illuminated sensing device and method for manufacturing same
  • Backside illuminated sensing device and method for manufacturing same

Examples

Experimental program
Comparison scheme
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Embodiment

[0035] figure 1 A backside light sensor 50 is shown along with a backside grid of light emitting pixels 100 . In this embodiment, the pixel 100 can be a photodiode or a photodiode, which is used to record the intensity or brightness of light on the diode. However, the pixel 100 may also include one of a reset transistor, a source follower transistor, a pinned layer photodiode, and / or a switch transistor. The backside light sensor 50 can be of various types, including a charge-coupled device (CCD) image sensor, a complementary metal-oxide-semiconductor (CMOS) image sensor, a contact image sensor (CIS), an active Pixel sensor (active-pixel sensor, APS) or passive pixel sensor (passive-pixel sensor). There are usually additional circuits and input / output terminals beside the grid pixels to provide an operating environment for the pixels to communicate with the outside world.

[0036] figure 2 A backside light sensor 50 is shown comprising a silicon-on-insulator (SOI) substra...

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PUM

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Abstract

A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

Description

technical field [0001] This invention relates to backside light sensing devices and methods of forming the same and is related to US Application Serial No. 60 / 695,682, filed June 30, 2005, which is incorporated herein by reference as prior art. Background technique [0002] A grid of pixels in an image sensor, such as photodiodes or photodiodes, reset transistors, source follower transistors, pinned layer photodiodes, and / or switching transistors, can be used to record the brightness of light or intensity. Pixels respond to changes in light by accumulating charges. When the light is stronger, more charges will accumulate. These charges can then be used in other circuits to enable color and brightness for appropriate applications, such as digital cameras. Common grid pixel types include charge coupled device (CCD) or complementary metal oxide semiconductor (CMOS) image sensors. [0003] The light sensor on the back side of the substrate is used to sense the amount of light...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/82
Inventor 许慈轩谢元智杨敦年喻中一
Owner TAIWAN SEMICON MFG CO LTD