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Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device

A technology of nitride semiconductors and light-emitting elements, which is applied to the structure of semiconductor devices, semiconductor lasers, and optical waveguide semiconductors. It can solve the problem of difficult resonator end face reflectivity, low COD level, and insufficient improvement of resonator end face reflectivity. and other issues to achieve the effect of improving reflectivity

Active Publication Date: 2010-02-24
SHARP FUKUYAMA LASER CO LTD
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Problems solved by technology

[0004] However, in the case where a silicon oxide film, an aluminum oxide film, a titanium oxide film, a tantalum oxide film, or a zinc oxide film, etc. , the reflectance of the resonator facet on the light exit side cannot be sufficiently improved
In addition, when a multilayer film based on a laminate of an aluminum oxide film and a silicon oxide film is formed as an AR coating film in contact with the surface of the resonator end face on the light exit side, there is a problem that the COD level is low
[0005] In addition, conventionally, when increasing the reflectance of the resonator end face on the light emitting side, the optical density of the resonator end face on the light emitting side becomes large, so it is difficult to increase the reflectance of the light emitting side while maintaining a high COD level. Reflectivity of resonator facets

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  • Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device
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Embodiment Construction

[0027] Embodiments of the present invention will be described below. In addition, in the drawings of the present invention, the same reference signs denote the same or corresponding parts.

[0028] exist figure 1 , shows a schematic cross-sectional view of a preferable example of a nitride semiconductor laser element which is an example of the nitride semiconductor light-emitting element of the present invention. Here, the nitride semiconductor laser element 100 has a structure in which the following layers are sequentially stacked by epitaxial growth from the semiconductor substrate 101 on a semiconductor substrate 101 made of n-type GaN: that is, an n-type laser made of n-type GaN with a thickness of 0.2 μm. Buffer layer 102; made of n-type Al with a thickness of 2.3 μm 0.06 Ga 0.94 A cladding layer 103 made of N; an n-type waveguide (guide) layer 104 made of n-type GaN with a thickness of 0.02 μm; Quantum well layer and a protective layer made of GaN with a thickness of...

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Abstract

A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed ofa nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

Description

technical field [0001] The present invention relates to a nitride semiconductor light emitting element and a method for manufacturing the nitride semiconductor light emitting element. Background technique [0002] Even among nitride semiconductor light-emitting elements, for nitride semiconductor laser elements, for the purpose of adjusting the reflectivity of laser light at the end face of the resonator, etc., the light emitting portion of the nitride semiconductor laser element is formed on the resonator end face on the light emitting side. An AR (Anti-Reflectance) coating film that makes the reflectance of the laser light on the end face of the resonator about 10%, and an HR ( High Reflectance) coating film (for example, refer to Patent Document 1 (JP-A-09-162496), Patent Document 2 (JP-A-2002-237648), and Patent Document 3 (JP-A-03-209895). [0003] Here, in the nitride semiconductor laser, it is possible to increase the reflectance of the laser light at the facet of th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01L33/00H01S5/028H01S5/22H01S5/343
Inventor 神川刚川口佳伸
Owner SHARP FUKUYAMA LASER CO LTD
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