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Production of X-ray mask by primary exposure with electron beam current mixed

An electron beam exposure and X-ray technology, which is applied in microlithography exposure equipment, photolithography exposure devices, circuits, etc., can solve the problems of difficult balance between efficiency and resolution, and achieve high resolution and efficiency improvement.

Active Publication Date: 2010-03-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a new method for preparing an X-ray mask, which uses electron beam size and current mixed for one exposure to prepare an X-ray mask, and solves the contradiction between efficiency and resolution that is difficult to balance when preparing an X-ray mask

Method used

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  • Production of X-ray mask by primary exposure with electron beam current mixed

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0048] (1) Divide the pattern to be subjected to electron beam exposure into two large and small patterns, and assign the names XXL and XXS respectively.

[0049] (2) Convert graphics XXL and XXS into two JEOL51 graphic formats according to different cutting steps, and assign file names XXL.j51 and XXS.j51 respectively.

[0050] (3) Edit the exposure job file, and set different exposure paths for fine graphics and large graphics in this file: the path name of fine graphics is: FINE; the specific settings are:

[0051] FINE: INITIAL (initial point), INIMSH (grid mark), PDEF (deflection), DISTOR (field distortion), FOCUS (focus),

[0052] CURRNT(current),

[0053] CYCLIC (cycle period), INIMSH (grid mark), PDEF (deflection), DISTOR (field distortion), CURRNT (current),

[0054] CASSET (film rack),

[0055] CYCLE (cycle period) 10M, F;

[0056] The path name of the large graphic is: COARS; the specific setting is:

[0057] COARS: INITIAL (initial point), INIMSH (grid mark), ...

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Abstract

A method for preparing X ray mask by once exposure with mixed current of electronic beam includes dividing domain to be fine drawing and large drawing then converting then according different condition and editing exposure file by two different paths, applying different operation parameter table on two divided domain drawings separately and applying different exposure dosage and exposure current separately on two divided domain drawings, setting value of secondary exposure initial position and value of printing plate position for two divided domain drawings to be the same value .

Description

[0001] source of technology [0002] The invention provides a method for preparing an X-ray mask by mixing one exposure with electron beam size and current. Background technique [0003] X-ray lithography (XRL) uses soft X-rays with a wavelength of 1nm, which is a kind of proximity lithography. In terms of lithography process performance, X-ray lithography can achieve high resolution, large depth of focus, and large image field at the same time, which is incomparable to all other lithography methods. Mask manufacturing technology is the most advanced technology in the development of X-ray lithography. the hard part. It is generally believed that the high difficulty of making 1X X-ray lithography masks is an obstacle to the early entry of X-ray lithography into the field of industrial production. It can be said that the success or failure of X-ray lithography mask development is a decisive factor related to whether and when X-ray lithography technology can be applied to indus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
Inventor 刘明叶甜春谢常青张建宏
Owner SEMICON MFG INT (SHANGHAI) CORP