Micro optical base board and LED with L1 micro optical structure
A light-emitting diode and micro-optic technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of multiple energy sources, comparable luminous brightness, and shortened service life of light-emitting diodes, and achieve improved luminous efficiency, simple procedures, and easy access. Effect
Inactive Publication Date: 2010-03-24
AUROTEK CORP
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Problems solved by technology
However, because this "smooth interface" is easy to cause the "total reflection effect", that is, the light rays with an incident angle greater than the "critical angle" will be reflected back into the light-emitting layer 13 through this smooth interface, and cannot enter the second semiconductor layer. 14
Therefore, when the existing light emitting diode 1 is in operation, part of the light generated by the light emitting layer 13 will be confined in the light emitting layer 13 and cannot reach the second semiconductor layer 14 smoothly, let alone the external environment.
That is to say, due to the "smooth interface" of the existing light-emitting diode 1, the "light extraction rate" of the light-emitting layer 13 cannot be further improved, thereby making the "luminous efficiency" and " Luminous brightness" is also subject to considerable restrictions
Therefore, the luminous brightness of the existing light-emitting diodes cannot match that of traditional lighting fixtures, and if the same brightness is to be produced, the existing light-emitting diodes need to consume more energy instead, and cannot take advantage of their energy-saving advantages. Resulting in shortened service life of existing light-emitting diodes
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[0043] see figure 2 , which is a schematic diagram of the method for forming a layered micro-optical structure according to the first preferred embodiment of the present invention. This method consists of the following steps:
[0044] First, step (A) is to provide a substrate 21 and a plurality of nanospheres 22, and these nanospheres 22 are stacked on the surface 211 of the substrate 21, and these nanospheres 22 are stacked on the surface 211 of the substrate 21 in an orderly manner The steps will be described in detail later. In this preferred embodiment, the material of these nanospheres 22 is silicon oxide (SiO x ), their diameters are all between 100 nm and 1.2 μm, and most of the nanospheres 22 have similar diameters.
[0045] Next, step (B) is to form an optical film layer 23 in the gap between the partial surface 211 of the substrate 21 and the nanospheres 22 by chemical vapor deposition. Wherein, the optical film layer 23 is preferably made of dielectric material...
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The present invention discloses a micro-optical substrate provided with a layer-like micro-optical structure and a light emitting diode provided with a layer-like micro-optical structure, in particular relating to a light emitting diode provided with an orderly nanometer level layer-like micro-optical structure. The light emitting diode provided with a layer-like micro-optical structure of the present invention comprises a substrate, a first semiconductor layer positioned on the surface of the substrate, a light emitting layer provided with a plurality of micro-recesses and positioned on the surface of the first semiconductor layer, a second semiconductor layer positioned on the surface of the light emitting layer, a first electrical contact part electrically connected with the substrate,and a second electrical contact part electrically connected with the second semiconductor layer.
Description
technical field [0001] The invention relates to a micro-optical substrate with a layered micro-optical structure and a light-emitting diode with a layered micro-optic structure, especially a light-emitting diode with an ordered nano-scale layered micro-optic structure. Background technique [0002] figure 1 It is a schematic diagram of an existing light-emitting diode. The existing light-emitting diode 1 cooperates with an external circuit (not shown in the figure) to convert electric energy from the external environment into light energy for output. This light emitting diode 1 comprises a substrate 11, a first semiconductor layer 12 located on the surface of the substrate 11, a light emitting layer 13 located on the surface of the first semiconductor layer 12, a second semiconductor layer located on the surface of the light emitting layer 13 layer 14 , a first electrical contact portion 15 electrically connected to the substrate 11 , and a second electrical contact portion...
Claims
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IPC IPC(8): H01L33/00H01L33/58
Inventor 李崇华陈建清
Owner AUROTEK CORP