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Siliceous film with smaller flat band shift and method for producing same

A technology of siliceous film and silicon atoms, applied in the field of preparing siliceous film

Inactive Publication Date: 2007-07-18
AZ ELECTRONIC MATERIALS (JAPAN) KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The disadvantage of siliceous films prepared by these methods is that the flat band shift in the CV curve is higher than that of siliceous films formed by high-density plasma CVD due to the presence of nitrogen, carbon, and hydrogen caused by the starting material polysilazane and solvent. Flat band displacement in membrane
However, in these patent documents, there has not been any study of the flat-band shift of siliceous films formed by these techniques

Method used

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  • Siliceous film with smaller flat band shift and method for producing same

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preparation example Construction

[0043] Preparation method of siliceous membrane

[0044] The preparation method of the siliceous film of the present invention comprises: coating the above-mentioned coating composition on a substrate, firing the coated substrate to form the siliceous film.

[0045] The surface material of the substrate used is not particularly limited, and examples thereof include bare silicon, and a silicon wafer with an optionally formed thermally grown oxide film or silicon nitride film. If necessary, structures such as trench isolation trenches may be formed on the substrate.

[0046] The method used for coating the coating composition on the surface of the substrate includes conventional methods such as spin coating, dip coating, spray coating and transfer methods.

[0047] The excess organic solvent is removed (by drying) from the coating film formed on the surface of the substrate, if necessary. The coated film is then fired in an atmosphere containing steam, oxygen or a mixed gas ...

Embodiment 1

[0071] Tris(isopropoxy)aluminum (1 g) was mixed in 100 g of dehydrated dibutyl ether to obtain a tris(isopropoxy)aluminum solution.

[0072] The perhydropolysilazane (20 g) prepared in Reference Synthesis Example 1 was dissolved in 80 g of dibutyl ether dehydrated with molecular sieves. An aluminum compound solution (27 mg) containing tris(isopropoxy)aluminum was added to the solution, and the mixed solution was filtered using a PTFE syringe filter having a filtration accuracy of 0.1 μm manufactured by ADVANTEC.

[0073] The flat band value was measured in the same manner as in Comparative Example 1 except that the mixed liquid was used.

Embodiment 2

[0075] The flat band value was measured in the same manner as in Example 1, except that tris(acetylacetonate)aluminum was used instead of tris(isopropoxy)aluminum, and the addition amount of the aluminum compound solution became 43 mg.

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Abstract

Disclosed are a method for producing a siliceous film having excellent insulating characteristics, and a coating composition used therefor. Specifically disclosed is a coating composition containing a perhydropolysilazane or modified perhydropolysilazane having a number average molecular weight of 100-50,000 and an aluminum compound having a molar ratio of aluminum atoms to silicon atoms of not less than 10 ppb and not more than 100 ppm. A siliceous film is produced by coating such a coating composition on a substrate and firing the coated substrate in an atmosphere containing water vapor, oxygen or a gas mixture of them.

Description

technical field [0001] The present invention relates to methods for preparing siliceous membranes. More specifically, the present invention relates to a method of preparing a siliceous film having a small flat band shift value and excellent insulating properties. Background technique [0002] In electronic equipment such as semiconductor equipment, semiconductor elements such as transistors and resistors are usually arranged on a substrate. These elements are electrically isolated from each other. Regions for insulating the elements are therefore arranged between these elements. This area is referred to as an "insulation area". A silicon film is often used as a material for forming the insulating region. [0003] Various methods for preparing siliceous membranes have been developed. Among them, a technique of producing a siliceous film by firing a polysilazane thin film has been developed (for example, Patent Document 1 or 2). [0004] The disadvantage of siliceous fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/16H01L21/762H01L21/316B32B18/00H01L29/78C01B33/12B32B9/00H01B3/46
CPCH01L21/02145C08G77/62H01L21/02222H01L21/02337C09D183/16H01L21/316H01L21/02126H01L21/3162H01L21/02282H01L21/3125C08K5/56C08L2666/52
Inventor 清水泰雄一山昌章名仓映乃
Owner AZ ELECTRONIC MATERIALS (JAPAN) KK