Film residual stress measuring structure and its producing and testing method

A technology of residual stress and thin film, which is applied in the field of measurement, can solve the problems of large layout space, structural arrays that cannot measure residual compressive stress and tensile stress at the same time, occupation, etc., and achieve the effect of improving utilization rate and saving layout space

Inactive Publication Date: 2007-10-10
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to overcome the defect that the film residual stress measurement structure occupies a large device layout space in the prior art, and the single structure array cannot measure the residual compressive stress and tensile stress at the same time, the present invention proposes a new structure and metho

Method used

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  • Film residual stress measuring structure and its producing and testing method
  • Film residual stress measuring structure and its producing and testing method
  • Film residual stress measuring structure and its producing and testing method

Examples

Experimental program
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Embodiment 1

[0032] Referring to Fig. 2, Fig. 3, film residual stress measurement structure 6 comprises a test plate 1, a support anchor point 2 and sacrificial layer 4, test plate 1 is suspended on the substrate 3 by support anchor point 2, and sacrificial layer 4 is filled in the test Between plate 1 and base 3. The test plate 1 is circular and transparent under the light of the microscope 9 . The support anchor point 2 is also circular and located in the center of the test plate 1 . The thickness of the test plate 1 and the height of the supporting anchor point 2 are consistent with the device to be tested for stress. Due to technological reasons, the test plate 1 has a depression at the support anchor point 2, and the shape of the depression is a circle consistent with the shape of the anchor point.

[0033] The thin-film residual stress measurement structure 6 is manufactured using surface silicon micromachining technology, as shown in Figure 7, and its processing process includes t...

Embodiment 2

[0041] Referring to Fig. 4 and Fig. 5, the thin film residual stress measurement structure 6 includes a test plate 1, a support anchor point 2 and a sacrificial layer 4, the test plate 1 is suspended on the substrate 3 through the support anchor point 2, and the sacrificial layer 4 is filled in the test Between plate 1 and base 3. The test plate 1 is a square with a square hole in the middle, and is transparent under the light of the microscope 9 . The supporting anchor point 2 is a square ring located on the outer periphery of the test plate 1 . The thickness of the test plate 1 and the height of the supporting anchor point 2 are consistent with the device to be tested for stress. Due to technological reasons, the test plate 1 has a depression at the support anchor point 2, and the shape of the depression is a square ring consistent with the shape of the anchor point.

[0042] The thin-film residual stress measurement structure 6 is manufactured using surface silicon microm...

Embodiment 3

[0050] Referring to Fig. 6, the thin film residual stress measurement structure 6 is made up of a series of test flat plate 1 arrays whose radii are uniformly increased, and each test flat plate 1 is suspended on the substrate 3 by a supporting anchor point 2, and the sacrificial layer 4 is filled between the test flat plate 1 and the test flat plate 1. Between base 3. All test plates 1 are round and opaque under the light of the microscope 9 . All support anchor points 2 are also circular and located in the center of the corresponding test plate 1 . The thickness of each test plate 1 and the height of the supporting anchor point 2 are consistent with the device to be tested for stress. Due to technological reasons, the test plate 1 has a depression at the support anchor point 2, and the shape of the depression is a circle consistent with the shape of the anchor point.

[0051] The thin-film residual stress measurement structure 6 is manufactured using surface silicon microm...

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Abstract

A measurement device of residual stress on film is prepared for hanging arbitrary form test plate on substrate through arbitrary form and position support anchor point, packing scarification layer between test plate and substrate, setting thickness of test plate and height of support anchor point to be all consistence with that of component to be measured. Its measuring method is also disclosed.

Description

technical field [0001] The invention belongs to the measurement field and relates to the measurement of film residual stress. Background technique [0002] In the past ten years, surface silicon micromachining technology has been widely used in the field of microelectromechanical systems (MEMS), and a large number of microsensors, microactuators and other MEMS devices have been successfully developed on the basis of this technology. However, since the surface process is usually carried out under high temperature conditions, a large thermal stress will be generated inside the structural film during the process of cooling to room temperature after the process is completed. At the same time, a large internal stress will also appear during the deposition of the film. These two parts of stress are the main sources of residual stress in the film, and finally manifest as two states of compressive stress and tensile stress. Excessive residual stress will greatly affect the perform...

Claims

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Application Information

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IPC IPC(8): G01N13/00B81B3/00B61C1/00
Inventor 苑伟政虞益挺乔大勇梁庆
Owner NORTHWESTERN POLYTECHNICAL UNIV
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