Photosensitive composition, pattern forming material, photosensitive laminate, pattern forming apparatus and method of pattern formation
A technology of photosensitive composition and photosensitive layer, which is applied in the field of high-definition wiring patterns and permanent patterns, and can solve the problems of undisclosed, poor spectral sensitivity, and high cost of pattern forming devices
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0855] —Production of patterning material for dry film resist —
[0856] On a polyethylene terephthalate film with a thickness of 20 μm as the support, a photosensitive composition solution for a dry film resist composed of the following composition was applied and dried, and then the support was A photosensitive layer with a thickness of 15 μm was formed to form the aforementioned patterning material for dry film resist.
[0857] [Composition of photosensitive composition solution for dry film resist]
[0858] ·Methyl methacrylate / styrene / benzyl methacrylate / methacrylic acid copolymer (copolymer composition (mass ratio): 8 / 30 / 37 / 25, weight average molecular weight: 60,000, acid value 163) 60 mass Share
[0859] · 7.0 parts by mass of polymerizable monomer represented by the following structural formula (75)
[0860] ·Adduct of 1 / 2 mol ratio of hexamethylene diisocyanate and tetraoxirane-methacrylate
[0861] 7.0 parts by mass ...
Embodiment 2
[0889] In Example 1, 10-N-butyl-2-chloroacridone was used instead of N-methylacridone in the photosensitive composition solution for dry film resist. In the same manner as in Example 1, a pattern forming material for dry film resist and a photosensitive laminate for dry film resist were produced. It should be noted that the maximum absorption wavelength of 10-N-butyl-2-chloroacridone as the aforementioned sensitizer is 365 nm.
[0890] In addition, in the same manner as in Example 1, the shortest development time, spectral sensitivity, and minimum exposure that can be patterned were measured. Furthermore, in the same manner as in Example 1, the deviation of the line width was measured. The results are shown in Table 3. It should be noted that the shortest development time is 7 seconds.
Embodiment 3
[0892] In Example 1, 2,2-bis(o-chlorophenyl)-4,4',5,5'-tetraphenylbidiimidazole was set to 0.50 parts by mass. In addition, the same as in Example 1 In the same manner, a pattern forming material for dry film resist and a photosensitive laminate for dry film resist were produced.
[0893] In addition, in the same manner as in Example 1, the shortest development time, spectral sensitivity, and minimum exposure that can be patterned were measured. Furthermore, in the same manner as in Example 1, the deviation of the line width was measured. The results are shown in Table 3. It should be noted that the shortest development time is 7 seconds.
PUM
Property | Measurement | Unit |
---|---|---|
wavelength | aaaaa | aaaaa |
absorption wavelength | aaaaa | aaaaa |
acid value | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information

- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com