Semiconductor device and its manufacturing method

A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of conductor thinning and disappearing, and cannot fully suppress interference in high-concentration areas, so as to prevent thinning and disappearance, reducing junction leakage current, and preventing the reduction of active region width

Inactive Publication Date: 2012-05-09
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in such a semiconductor device, since the upper end of the conductor is positioned lower than the lower end of the high-concentration source-drain region on the sidewall portion of the trench, the potential interference between the high-concentration regions cannot be sufficiently suppressed.
In addition, there is no mention at all of the problem of thinning and disappearing conductors at the element isolation region with a wide trench width

Method used

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  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0130] figure 1 is a cross-sectional view showing a schematic structure of the semiconductor device according to Embodiment 1 of the present invention. This semiconductor device has thin trench isolations 30 and 30 ′ in which a polysilicon film 4 as a conductive film is disposed through a silicon oxide film 3 in a trench 2 provided in a silicon substrate 1 as a semiconductor substrate. Here, in the trench-type element isolation 30 , the polysilicon film 4 arranged in the trench 2 is arranged on the entire surface over the entire trench width on the bottom surface in the trench 2 . In addition, in the trench-type element isolation 30 ′, the polysilicon film 4 arranged in the trench 2 is arranged only on the sidewall side of the bottom surface in the trench 2 , and is not arranged on substantially the bottom surface of the trench 2 . Near the central part.

[0131] In trench-type element isolation 30 , the height of polysilicon film 4 is lower than the surface of silicon subs...

Embodiment approach 2

[0157] Figure 13 It is a cross-sectional view showing a schematic structure of a semiconductor device according to Embodiment 2 of the present invention. In this semiconductor device, there is a thin trench-type element isolation 40 in which a polysilicon film 4 as a conductive film is disposed through a silicon oxide film 3 in a trench 2 provided in a silicon substrate 1 as a semiconductor substrate. Here, in the trench-type element isolation 40 , the polysilicon film 4 is arranged on the entire surface over the entire trench width on the bottom surface in the trench 2 .

[0158] In trench-type element isolation 40 , the height of polysilicon film 4 is lower than the surface of silicon substrate 1 . Furthermore, the height of polysilicon film 4 in trench-type element isolation 40 is almost constant throughout trench-type element isolation 40 independent of the width of trench-type element isolation, that is, the trench width of trench 2 . However, the height of the remaini...

Embodiment approach 3

[0183] Figure 25 It is a cross-sectional view showing a schematic structure of a semiconductor device according to Embodiment 3 of the present invention. This semiconductor device has a thin trench isolation 40 in which a polysilicon film 4 as a conductive film is disposed through a silicon oxide film 3 in a trench 2 provided in a silicon substrate 1 as a semiconductor substrate. Here, in the trench-type element isolation 40 , the polysilicon film 4 is arranged on the entire surface over the entire trench width on the bottom surface in the trench 2 .

[0184] In trench-type element isolation 40 , the height of polysilicon film 4 is lower than the surface of silicon substrate 1 . Furthermore, the height of polysilicon film 4 in trench-type element isolation 40 is almost constant throughout trench-type element isolation 40 independent of the width of trench-type element isolation, that is, the trench width of trench 2 . However, the height of the remaining polysilicon film 4 ...

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Abstract

A method for manufacturing with a high yield a semiconductor device in which elements are isolated by trench element isolation and the influence of the potential of an adjacent element on another node is effectively prevented. The method comprises the steps of forming a first layer on a substrate, forming a trench by etching the first layer and the substrate, thermally oxidizing the inner wall ofthe trench, depositing a first conductive film having a thickness of 1 / 2 or more of the width of the trench over the substrate including the inside of the trench, leaving the first conductive film only within the trench by removing the first conductive film on the first layer by CMP, so adjusting the height of the conductive film by anisotropically etching the conductive film within the trench that the height is less than that of the surface of the substrate, depositing an insulating film on the first conductive film by CVD to bury the upper part of the first conductive film within the trench, planarizing the insulating film by CMP, and removing the first layer.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a semiconductor device with a trench-type component isolation structure and a manufacturing method thereof. Background technique [0002] In a semiconductor integrated circuit, in order to control each element in a completely independent state without electrical interference between elements during operation, it is necessary to form an element isolation structure with an element isolation region. As one of the methods for forming such element isolation regions, the trench isolation method is well known, and various improved methods are being considered. [0003] The trench isolation method is a method of forming a trench on a substrate and filling the trench with an insulator. Since the bird's beak hardly occurs, it can be said to be an indispensable element isolation method for miniaturization of semiconductor integrated circuits. On the other hand, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L23/52H01L21/3205H01L29/78
CPCH01L29/7833H01L21/763H01L21/743H01L21/823475H01L21/823871H01L21/823878H01L21/823481H01L21/76229H01L23/485H01L2924/0002H01L2924/00H01L21/3205H01L21/76H01L23/52
Inventor 黑井隆堀田胜之北泽雅志石桥真人
Owner RENESAS ELECTRONICS CORP
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