Multiple layer synthesis furnace device
A synthesis furnace and compound technology, which is applied in the field of multi-layer compound synthesis furnace, can solve the problems of high production cost, poor safety, and hindering the development of information materials business, and achieve high product quality, high purity, and ensure production capacity and safety. Effect
Inactive Publication Date: 2010-05-19
四川鑫龙碲业科技开发有限责任公司
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] With the rapid development of the world's high-tech industries, the demand for semiconductor compounds in the world's high-tech industries has grown rapidly. At present, the traditional production methods and processes of semiconductor compounds have the disadvantages of high production costs and poor production safety.
In particular, due to the constraints of small production equipment, it is impossible to realize the industrial production of semiconductor compounds, which seriously hinders the development of high-tech industries and microelectronics and optoelectronics industries.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0017] The multi-layer compound synthesis furnace device of the present invention has simple structure and is easy to manufacture, such as figure 1 shown. The synthesis furnace 1 is provided with a high-temperature refractory brick insulation layer 2, a silicon carbon tube is used as a heating source, and a heating wire 3, a heat insulation board 4 and a synthesis reaction tube 5 are arranged in the heating source, and the furnace chamber of the synthesis furnace is separated by a heat insulation board 4. A plurality of synthesis chambers, each synthesis chamber is equipped with a plurality of synthesis reaction tubes 5. The furnace cavity of the synthesis furnace is equipped with a heating wire 3, and the heating wire is equipped with an insulation layer 2, so as to strictly control the uniform distribution of the thermal field temperature inside the furnace cavity, and the thermal field temperature The gradient is ≤±5°C / cm, and the separation of each synthesis chamber indepe...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention relates to a multilayer compound synthetic furnace device, which is characterized in that an insulation layer (2), a heating wire (3), an insulation board (4) and a synthetic reaction tube (5) are arranged in a synthetic furnace (1), the furnace chamber of the synthetic furnace is divided into a plurality of synthetic chambers with the insulation board, and a plurality of synthetic reaction tubes (5) are put in each synthetic chamber, the thermal field temperature gradient of the furnace chamber is controlled in less or equal to plus or minus 5 DEG C, and each synthetic chamber being separated ensures the security during the synthetic process. The multilayer compound synthetic furnace device is applied to the synthesis of cadmium telluride, zinc telluride and lead telluride.
Description
technical field [0001] The invention relates to a multilayer compound synthesis furnace device, which belongs to the field of compound synthesis equipment. Background technique [0002] With the rapid development of the world's high-tech industries, the demand for semiconductor compounds in the world's high-tech industries has grown rapidly. At present, the traditional production methods and processes of semiconductor compounds have the disadvantages of high production costs and poor production safety. In particular, due to the constraints of small production equipment, it is impossible to realize the industrial production of semiconductor compounds, which seriously hinders the development of high-tech industries and information materials in the microelectronics and optoelectronics industries. Contents of the invention [0003] The object of the present invention is to provide a multi-layer compound synthesis furnace device for the deficiencies in the prior art, which is c...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): B01J3/00F27B5/06F27B5/02C01B19/04
Inventor 侯仁义
Owner 四川鑫龙碲业科技开发有限责任公司