Semiconductor device and wire bonding method used for the same
A semiconductor and wire connection technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., which can solve problems such as increasing bond pads and contact dimensions
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[0067] 1. The first embodiment
[0068] The semiconductor device 1 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 4. As shown in FIGS. 1 and 2, a plurality of pins 7 and 9 arranged adjacent to each other are arranged on the periphery of a semiconductor chip 5 mounted on a table 3 having a planar shape, wherein the pins 7 are electrically connected via three leads 15 to 17 To the three electrode pads 19 to 21, and the pin 9 is electrically connected to the three electrode pads 23 to 25 via the three leads 15 to 17. For the semiconductor chip 5, multiple sets of pins connected via three leads and three electrodes are arranged.
[0069] Each of the pins 7 and 9 has an elongated shape extending toward the semiconductor chip 5. The second bonds L11 to L13 connected to the leads 11 to 13 are arranged in the longitudinal direction along the lead 7, and the second bonds L21 to L23 connected to the leads 15 to 17 are arranged in th...
Example
[0101] 2. The second embodiment
[0102] Next, a wire bonding method according to the second embodiment of the present invention will be described with reference to FIGS. 7A to 7C, FIGS. 8A and 8B, FIGS. 9A to 9C, FIGS. 10A and 10B, and FIGS. 11A and 11B. As shown in FIGS. 7A-7C, 8A, 8B, 9A, and 9B, a wire bonding method is performed so that the bonding pad 101a formed on the semiconductor chip 101 mounted on the board 103 and the bonding pad 101a formed on the board 103 are formed on the board 103 via the metal wire 105 An electrical connection is established between electrode pads (or connection pads) 103a around the semiconductor chip 101.
[0103] As shown in FIG. 7A, the semiconductor chip 101 is pre-mounted on the board 103 so that electrode pads 103a are formed on the board 103 at the periphery of the semiconductor chip 101. Here, the small-diameter capillary 109 is used to provide a thin lead 107 whose diameter is smaller than that of the metal wire 105. The end of the sma...
Example
[0130] 3. The third embodiment
[0131] A semiconductor device 201 according to a third embodiment of the present invention will be described with reference to FIGS. 12 to 14. As shown in FIGS. 12 and 13, the semiconductor chip 205 is mounted on the surface 203a of the stage 203 having a planar shape in a plan view, in which a plurality of electrode pads 207 and 209 are formed on the surface 205a of the semiconductor chip 205. The plurality of pins 211 and 213 arrange the periphery of the semiconductor chip 205 in which they are connected to the electrode pads 207 to 209 via a plurality of leads 215 to 217.
[0132]In the semiconductor chip 201, the stage 203, the semiconductor chip 205, and the leads 215 and 217 are sealed with a mold resin 219, and the mold resin 219 also integrally fixes the stage 203, the semiconductor chip 205, the pins 211 and 213, and the leads 215 and 217 In the predetermined location.
[0133] The electrode pads 207 and 209 are alternately arranged along ...
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