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Flash memory devices including block information blocks and methods of operating same

A technology for block information and equipment, applied in the field of semiconductor memory equipment, can solve the problems of reducing the efficiency of using the spare area and the long time

Inactive Publication Date: 2008-02-27
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This operation may take a long time to read block information
In addition, a spare area is allocated for each block to store block information, which reduces the efficiency of utilizing the spare area

Method used

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  • Flash memory devices including block information blocks and methods of operating same
  • Flash memory devices including block information blocks and methods of operating same
  • Flash memory devices including block information blocks and methods of operating same

Examples

Experimental program
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Embodiment Construction

[0018] Preferred embodiments of the present invention will now be described in more detail with reference to the accompanying drawings, showing a flash memory device as an example for illustrating the structural and operational characteristics provided by the present invention.

[0019] However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout the drawings.

[0020] FIG. 2 is a block diagram illustrating a flash memory device according to the present invention. The flash memory device according to the present invention is a NAND flash memory device. However, the present invention is applicable to other non-volatile memory devices (eg, magnetic RAM, phase-changeable RAM, fer...

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Abstract

Disclosed is a semiconductor memory device including a plurality of memory blocks each of which is segmented into main and spare regions, and a block information storing region storing block information of the memory blocks.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority from Korean Patent Application No. 2006-80693 filed on Aug. 24, 2006, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention disclosed herein relates to semiconductor memory devices, and more particularly, to flash memory devices. Background technique [0004] A flash memory device, which is a non-volatile memory, is a type of electrically erasable programmable read-only memory (EEPROM) in which data can be written to a plurality of memory blocks through a programming operation. A general EEPROM can operate with the characteristic that one memory block can be erased or programmed at a time. This means that flash memory can operate faster and more efficiently in systems that simultaneously read data from and write data to other memory areas. Generally, flash memory or EEPROM is configured such that an insulating film surrounding...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/00G11C29/00
CPCG11C16/04G11C29/76G11C2229/723G06F12/0246G06F12/00G06F12/06
Inventor 金恩敬牟炫宣姜相喆
Owner SAMSUNG ELECTRONICS CO LTD