Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase change memory and manufacturing method thereof

A technology of phase-change memory and storage elements, applied in semiconductor devices, electric solid-state devices, electrical components, etc.

Active Publication Date: 2008-03-12
STMICROELECTRONICS SRL
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Although the processes used to manufacture memory cells of the type described above are known, they are easily modified

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Referring to FIG. 3, phase change memory cells, such as cells 111-119 (FIG. 1), are formed on a substrate 10. Referring to FIG. There is an interlayer dielectric 12 on the substrate. A semiconductor integrated circuit including field effect transistors is formed in and on the substrate 10 . On the interlayer dielectric 12 is a dielectric 14, such as an oxide. Formed within dielectric 14 are electrodes 20, such as row lines 151-153 (FIG. 1).

[0023] On the electrode 20 is a damascene structure comprising a nitride layer 16 covered by an oxide layer 18 .

[0024] As shown in FIG. 4, switching material 24 is formed in oxide layer 18 and nitride layer 16, and switching material 24 forms phase change memory selection device 120 (FIG. 1). Because the switching material 24 is formed within the via or trench, problems associated with adhesion of surrounding layers are avoided. That is, the overlay layer 21 (explained below) is sufficiently secured to the layer surrounding ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreo ver, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.

Description

technical field [0001] The present invention relates generally to phase change memories. Background technique [0002] Phase-change memory devices use phase-change materials, ie, materials that can be electrically switched between a generally amorphous state and a generally crystalline state, for electronic memory applications. One type of memory element uses a phase change material that is electrically switchable between a generally amorphous structural state and a generally crystalline state of local order or between different detectable states of local order across the entire spectrum , the entire spectrum is between fully amorphous and fully crystalline. The state of a phase change material is also non-volatile, where when set to crystalline, semi-crystalline, amorphous, or semi-amorphous to represent a resistance value, the value is held until changed by another programming event because This value represents the phase or physical state of the material (eg, crystallin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24H10N80/00
CPCH01L45/126H01L27/2427H01L45/06H01L45/1683H01L27/24H01L45/141H01L45/144H01L45/04H01L45/1233H10B63/24H10N70/20H10N70/8413H10N70/882H10N70/231H10N70/066H10N70/8828H10N70/826
Inventor I·V·卡波夫C·C·郭Y·金G·阿特伍德
Owner STMICROELECTRONICS SRL