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Horizontal PNP type audion and its making method

A triode, N-type technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing the current gain of lateral triodes, and achieve the effect of improving current gain and collection efficiency.

Active Publication Date: 2008-04-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the existence of a negative base region in the intrinsic base region, the current gain of the lateral triode is reduced

Method used

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  • Horizontal PNP type audion and its making method
  • Horizontal PNP type audion and its making method
  • Horizontal PNP type audion and its making method

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Embodiment Construction

[0028] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0029] The structure of the horizontal PNP type triode of the present invention is as Figure 5 and Figure 6 shown, with figure 1 and image 3 The difference in the structure of the lateral PNP transistor in the shown prior art is: according to the prior art, there is a negative base region between the N-type buried layer and the p-type emitter region; and according to the present invention, between the N-type buried layer And between the p-type emitter region is a silicon dioxide buried layer.

[0030] The advantage of the lateral PNP transistor provided by the present invention is that the negative base region part in the intrinsic base region has been eliminated, and the emission of the emitter current has been changed. In the lateral PNP transistor of the present invention, the emitter current is as follows: Figure 8 As shown, there is no current fl...

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Abstract

The invention discloses a transverse PNP type triode and a manufacturing method thereof. A silicon dioxide buried layer is arranged between a P type emitter region and an N type buried layer. The manufacturing method includes injecting oxygen ions partially in an N type epitaxial layer after the completion of the N type epitaxial layer growth; the position of injecting oxygen ions is between the N type buried layer and the P type emitter region to be formed and the injected oxygen ions can facilitate to form the silicon dioxide buried layer partially between the N type buried layer and the P type emitter layer in subsequent heating course. The transverse PNP type triode manufactured according to the method provided by the invention can improve the collection efficiency of collecting electrodes and the current gain of the triode.

Description

technical field [0001] The invention relates to a semiconductor and a manufacturing process thereof, in particular to a lateral PNP transistor structure and a manufacturing method thereof. Background technique [0002] At present, the common PNP type triode is often made horizontally, and its structural section is as follows: figure 1 As shown, the top view is as figure 2 shown. On the P-type substrate, there are N-type buried layer and N-type epitaxial layer in sequence along the vertical direction. The N-type epitaxial layer includes a P-type collector region, an N-type base region, and a P-type emitter region. The field between the base region and the collector region Oxygen isolation, the P-type collector area is drawn out through the collector, the P-type emitter area is drawn out through the emitter, and the N-type base area is drawn out through the base. The base area can be divided into two parts: one part is the intrinsic base area, and the other part is the ext...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/735H01L21/331
Inventor 刘俊文
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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