Flash memory device and method for controlling erased operation

Abstract

The present invention provides a flash memory device and a method used for controlling erasing operation of the flash memory device.A non-volatile memory mechanism includes a first and a second memorycell blocks, wherein each memory cell block includes a plurality of memory cells, a local drain selection wire, a local source pole selection wire and a plurality of local character wires.A block selection unit respectively connects the set local character wires and an integral character wire to respond to block selective signals.A first voltage bias generator is allocated to be used for applyingat least a first and a second erasing voltages which are positive ones to the integral character wire during the erasing manipulation period, wherein, the first erasing voltage is applied to the integral character wire during a first erasing try period of the erasing operation, the second erasing voltage is applied to the integral character wire during the second erasing try period, and a seconderasing try is executed if a first erasing try does not make good erasing manipulation.A body voltage generator applies a body electric voltage to a body of the memory cell during the erasing manipulation period.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more particularly, to a flash memory device in which the reliability of an erase operation due to leakage current in a block-based erase operation can be prevented from being reduced, and to controlling the flash memory device method of the erase operation. Background technique [0002] Generally, flash memory devices can be classified into NOR type and NAND type, wherein the NOR type is generally used to store a small amount of information at high speed, and the NAND type is generally used to store a large amount of information. The flash memory device performs a read operation, a program operation, and an erase operation. The terms "program operation" and "erase operation" refer to the process of storing and storing data in one or more memory cells by injecting electrons into and removing electrons from the floating gate. Data manipulation. For example, in a program operation, onl...

AI Technical Summary

Problems solved by technology

If the erase operation is not implemented properly, the corresponding block will be marked as an invalid block that is not used

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