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Resistive memory including refresh operation and refreshing method thereof

A resistive storage and memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as read interference

Inactive Publication Date: 2012-04-04
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Furthermore, when reading the resistance value of a phase-change memory cell using typical read operations, there is a risk of read disturb, which causes additional crystallization of the phase-change material

Method used

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  • Resistive memory including refresh operation and refreshing method thereof
  • Resistive memory including refresh operation and refreshing method thereof
  • Resistive memory including refresh operation and refreshing method thereof

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Embodiment Construction

[0019] In the following detailed description, reference is made to the drawings constituting a part thereof, in which specific embodiments are shown by showing specific embodiments in which the present invention can be implemented. In this regard, referring to the directions of the drawings being described, directional terms such as "top", "bottom", "front", "rear", "front", "tail", etc. are used. Because the elements of the embodiments of the present invention can be placed in a number of different orientations, the directional terminology is used for exemplary purposes but is not enough to limit the present invention. It should be understood that without departing from the scope of the present invention, other embodiments may be adopted, and structural or logical changes may be made. Therefore, the following detailed description should not be considered for limiting purposes, and the scope of the present invention is defined by the appended claims.

[0020] figure 1 It is a bl...

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Abstract

A memory device includes an array of resistive memory cells, a counter having an increment step based on temperature, and a circuit for refreshing the memory cells in response to the counter exceeding a preset value.

Description

Background technique [0001] One type of memory is resistive memory. Resistive memory uses the resistance value of a memory cell to store one or more bits of data. For example, a storage element programmed to have a high resistance value can represent a logical "1" data bit value, and a storage element programmed to have a low resistance value can represent a logical "0" data bit value. Typically, the resistance value of the storage element is electrically switched by applying a voltage pulse or a current pulse to the storage element. [0002] One type of resistive memory is phase change memory. Phase change memory uses phase change materials in resistive memory elements. The phase change material exhibits at least two different states. The state of the phase change material can be referred to as an amorphous state and a crystalline state, the amorphous state refers to a more disordered atomic structure, and the crystalline state refers to a more ordered crystal lattice. The a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C11/06
CPCG11C11/5685G11C2213/32G11C16/3418G11C2213/31G11C16/3431G11C11/5678G11C11/5614G11C7/04G11C13/0069G11C11/406G11C13/0007G11C13/0004G11C13/0033G11C11/40626G11C13/0011
Inventor 托马斯·哈普扬·鲍里斯·菲利普
Owner INFINEON TECH AG