Method for making grid oxidizing layer
A technology of gate oxide layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems such as transconductance and drive current capability degradation, device performance degradation, and reduction of N-type semiconductors, etc., to achieve The effect of increasing the gate oxide thickness of the drain terminal, reducing the vertical electric field intensity, and alleviating adverse effects
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[0011] Such as figure 1 As shown, the gate oxide layer manufacturing method of the present invention includes the following steps: first, as figure 2 As shown, a layer of polysilicon is paved on the silicon dioxide layer on the P-type well, that is, the gate oxide layer, and the thickness of the paved silicon dioxide is between 1000 angstroms and 3000 angstroms according to different process requirements. Then, the polysilicon etching area is opened, and here the polysilicon etching area is opened by photolithography. Such as image 3 As shown, an inward gap is formed at the interface between polysilicon and silicon dioxide during polysilicon etching by dry etching. According to different process conditions, the depth of the inward notch in the horizontal direction does not exceed the boundary between the drain and the channel substrate. Next, if Figure 4 As shown, the polysilicon is re-oxidized, and silicon dioxide with a thickness of 30 angstroms to 150 angstroms is fo...
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