Method for making grid oxidizing layer

Abstract

The invention discloses a manufacturing method of a grid oxide layer, comprising the following steps: firstly, a polysilicon layer is laid on a silicon dioxide layer; secondly, a polysilicon etching zone is opened; thirdly, a polysilicon over etching is carried out to form an inward gap on the interface between the polysilicon layer and the silicon dioxide layer; fourthly, the polysilicon is oxidated again to form silicon dioxide on the gap formed in the third step; fifthly, a grid oxide layer is formed. By raising the leakage-end grid oxide thickness of component, the invention can control the injection effect of a hot carrier and slow down a bad impact on component capability by the hot-carried injection effect, so as to enhance the component capability.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a gate oxide layer manufacturing method in the field of semiconductor manufacturing technology. Background technique [0002] The hot carrier injection effect is a very well-known semiconductor effect. Hot carriers are conduction band electrons or valence band holes with high energy under the action of a strong electric field near the drain end of the MOS transistor. Hot carriers can be injected into the gate oxide layer of MOS transistors through various mechanisms, which is called hot carrier injection effect. The hot carrier injection effect will lead to silicon-silicon dioxide interface defects and hot carrier defects in silicon dioxide. The hot carrier injection effect has a prominent impact on the performance of semiconductor devices. [0003] Taking an NMOS device as an example, channel hot electron injection causes channel hot electrons to collide ...

AI Technical Summary

Problems solved by technology

The hot carriers injected into the gate oxide layer can generate trap charges in the oxide layer, and generate interface states at the silicon-silicon dioxide interface of the device, resulting in degradation of device performance, such as threshold voltage drift, transconductance and Decreased drive current capability and increased subthreshold current

[0004] The hot carrier injection effect will reduce the turn-on current of N-type semiconductors, such as NMOS devices, and increase the turn-off current of P-type semiconductors, such as PMOS devices.

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