Method and apparatus for plasma enhanced chemical vapor deposition
A technology of plasma and vapor phase deposition, which is applied in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve problems such as complex adjustments, and achieve the effect of simplifying equipment and eliminating complex adjustments
Inactive Publication Date: 2010-08-11
AUER LIGHTING
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Problems solved by technology
Furthermore, since the amount of material deposited during a pulse depends not only on the duration of the pulse but also on its power, the adjustment of the microwave power is complicated, especially when precise layer thicknesses are very important the case
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[0020] Fig. 1 illustrates a microwave pulse diagram of a pulse according to EP0522281A1, for example, as known in the prior art. Amplitude is U 2 And the duration is shorter as t u The periodic pulse advancement overlaps in amplitude U 1 And the duration is T on the microwave pulse. By this periodic pulse advancement, the plasma is ignited and maintained by the pulse intensity between advancements.
[0021] Figure 2 shows a diagram of microwave pulses used in accordance with the invention, for example. In this case, the power L of the pulse is plotted as a function of time t.
[0022] The pulse is injected into the reactor in the form of a pulse train with a duration of t1. Each pulse sequence 1 of duration t1 is subdivided into a single ignition pulse 3 of duration t3, wherein between the ignition pulses 3, the microwave power is interrupted or switched off for a duration of t4. A single pulse sequence 1 is interrupted by a break of duration t2. In this case, the duration t2 o...
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The invention is based on the object of reducing the heating of substrates during plasma enhanced chemical vapor deposition. For this purpose, a method and an apparatus for coating substrates by means of plasma enhanced vapor deposition are provided, in which at least part of the surroundings of the substrate surface of a substrate to be coated is evacuated and a process gas with a starting substance for the coating is admitted, wherein the coating is deposited by a plasma being ignited by radiating in electromagnetic energy in the surroundings of the substrate surface filled with the processgas. The electromagnetic energy is radiated in in the form of a multiplicity of pulse sequences, preferably microwave or radiofrequency pulses, with a multiplicity of pulses spaced apart temporally by first intermissions, wherein the electromagnetic energy radiated in is turned off in the intermissions, and wherein the intermissions between the pulse sequences are at least a factor of 3, preferably at least a factor of 5, longer than the first intermissions between the pulses within a pulse sequence.
Description
Technical field [0001] The present invention relates generally to plasma-enhanced chemical vapor deposition, and more particularly to plasma-enhanced chemical vapor deposition using pulsed plasma. Background technique [0002] EP0522281A1 discloses a method and equipment for generating pulsed plasma using pulsed microwaves. In this case, the ignition of the plasma at the beginning of the pulse is supported by high-voltage pulses or by microwave pulse propulsion. [0003] However, maintaining the ignited plasma with the corresponding microwave generator power during the pulse duration can cause the substrate to be coated to heat up, especially the surface, which will adversely affect the product performance of the temperature-sensitive substrate . Therefore, in the case of a thermoplastic substrate, for example, surface softening occurs. In addition, because the amount of material deposited during the pulse depends not only on the duration of the pulse but also on its power, the ...
Claims
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IPC IPC(8): C23C16/50C23C16/52
CPCC23C16/405C23C16/52C23C16/505C23C16/511H01J37/32266C23C16/402C23C16/00C23C16/455C23C16/50H01L21/285
Inventor 托马斯·库伯尔拉斯·贝维格克里斯托夫·默勒拉斯·布兰德特托马斯·尼克罗斯
Owner AUER LIGHTING