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Methods of restoring data in flash memory devices and related flash memory device memory systems

A device and flash memory technology, which is applied in the field of semiconductor storage devices and can solve problems such as frequent reading errors

Active Publication Date: 2012-11-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such read errors occur more frequently as the number of bits of data stored in each memory cell increases
Additionally, for using figure 2 This problem can become even more severe in the case of threshold voltage distributions that overlap adjacent states as shown by the threshold voltage distributions depicted by the dashed lines in

Method used

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  • Methods of restoring data in flash memory devices and related flash memory device memory systems
  • Methods of restoring data in flash memory devices and related flash memory device memory systems
  • Methods of restoring data in flash memory devices and related flash memory device memory systems

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Embodiment Construction

[0044] Embodiments of the invention will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and thorough, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout.

[0045] It will be understood that although the terms first, second etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein,...

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Abstract

Methods for setting a read voltage in a memory system which comprises a flash memory device and a memory controller for controlling the flash memory device, comprise sequentially varying a distribution read voltage to read page data from the flash memory device; constituting a distribution table having a data bit number and a distribution read voltage, the data bit number indicating an erase state among the page data respectively read from the flash memory device and the distribution read voltage corresponding to the read page data; detecting distribution read voltages corresponding to data bit numbers each indicating maximum points of possible cell states of a memory cell, based on the distribution table; and defining new read voltages based on the detected distribution read voltages.

Description

[0001] Cross References to Related Applications [0002] This US nonprovisional patent application claims priority under 35 U.S.C § 119 to Korean Patent Application 2006-102379 filed on October 20, 2006, the entire contents of which are incorporated herein by reference. field of invention [0003] The present invention relates to semiconductor memory devices, and more particularly to electrically erasable and programmable flash memory devices. Background technique [0004] Electrically Erasable and Programmable Read-Only Memory (EEPROM) devices refer to a class of semiconductor memory devices in which data stored therein can be erased and replaced with new data. In some conventional EEPROM devices, only one memory region can be erased and programmed at any given time. A flash memory device is an EEPROM device that can erase or program multiple memory areas simultaneously with one programming operation. Therefore, flash memory devices can operate at higher speeds than other...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
CPCG11C16/349G11C16/3495G06F12/00G11C16/34G06F12/16
Inventor 朴起台金奇南李永宅
Owner SAMSUNG ELECTRONICS CO LTD