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Semiconductor device and method for fabricating the same

A gas and capacitor technology, applied in the field of capacitors, can solve problems such as difficulty in manufacturing capacitors, capacitor performance capacitance and leakage current deterioration

Inactive Publication Date: 2010-06-02
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, bubbles 14 may be formed between the ruthenium layer 13 and the structure, making it difficult to manufacture the capacitor and deteriorating the performance of the capacitor such as capacitance and leakage current

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

Examples

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Embodiment Construction

[0021] A capacitor and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

[0022] figure 2 A cross-sectional view of a capacitor according to one embodiment of the present invention is shown.

[0023] refer to figure 2 , forming a first ruthenium oxide (RuO 2 ) layer 22. Since the first ruthenium oxide layer 22 is highly adhesive, the first ruthenium oxide layer 22 serves as an adhesive layer to increase bonding between the substrate 21 and the lower electrode ruthenium layer 23 to be formed in a subsequent process.

[0024] A lower electrode ruthenium layer 23 is formed on the first ruthenium oxide layer 22 . A dielectric layer 24 is formed on the lower electrode ruthenium layer 23 . A top electrode will be formed on the dielectric layer 24 to form a capacitor. When a ruthenium layer is used as the metal layer of the upper electrode, a ruthenium oxide layer may be formed between t...

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Abstract

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer,and the ruthenium oxide layer is disposed next to the ruthenium layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Applications 10-2006-0134290 and 10-2007-0098562 filed on December 27, 2006 and October 1, 2007, respectively, the entire contents of which are incorporated herein by reference. Background technique [0003] The present invention relates to a method of manufacturing a capacitor of a semiconductor device, and more particularly to a capacitor including a metal layer such as a ruthenium (Ru) layer for a lower electrode or an upper electrode and a method of manufacturing the capacitor. [0004] Typically, a capacitor for a memory cell may include a lower electrode for storage, a dielectric layer, and an upper electrode for a plate. The capacitance of a capacitor can be increased by, for example, reducing the thickness of the dielectric layer, forming the capacitor into a three-dimensional shape to increase the effective area of ​​the capacitor, or using a high-k dielectric ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/92H01L29/43H01L27/00H01L21/02
CPCH01L28/65H01L28/75H01L21/02271H01L21/28556
Inventor 都官佑卢载盛李起正吉德信金荣大金珍赫朴京雄宋翰相
Owner SK HYNIX INC