Method for patterning zinc oxide transparent conductive film
A transparent conductive film, zinc oxide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high etching rate and difficult patterning, and achieve the effect of improving patterning characteristics and improving corrosion resistance
Inactive Publication Date: 2008-09-03
MITSUI MINING & SMELTING CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, such a zinc oxide-based transparent conductive film has a problem that the etching rate is too high and patterning is difficult.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0036] Example 1 When the added element is Si
Embodiment 2
[0037] Example 2 When the added element is Ti
Embodiment 3
[0038] Example 3 When the added element is Ge
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Disclosed is a method for patterning a zinc oxide transparent conductive film which enables to improve patterning characteristics by controlling the etching rate of the zinc oxide transparent conductive film. Specifically, when a zinc oxide transparent conductive film, which mainly contains zinc oxide while additionally containing at least one element selected from group IV elements of the periodic table, is patterned by etching, the zinc oxide transparent conductive film is treated with water before the etching step.
Description
technical field [0001] The present invention relates to a method for patterning a zinc oxide-based transparent conductive film mainly composed of zinc oxide. Background technique [0002] The use of infrared shielding plates and electrostatic shielding plates, conductive films such as surface heating elements and touch switches, and transparent electrodes such as display devices are increasingly in demand for transparent conductive films. As such a transparent conductive film, a tin-doped indium oxide film (ITO) has been conventionally used, but since ITO is amorphous, the price of ITO is high, and the emergence of an inexpensive transparent conductive film is expected. [0003] Therefore, zinc oxide-based transparent conductive films, which are amorphous films cheaper than ITO, have attracted attention, and zinc oxide-based transparent conductive films that require high conductivity and stable addition of various elements are being studied (see Patent Documents 1 to 4, etc....
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L31/022466Y02E10/50H01L31/1884Y02E10/547H01L31/02366
Inventor 高桥诚一郎田平泰规高桥广己宫下德彦矢野智泰
Owner MITSUI MINING & SMELTING CO LTD