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Polycrystalline silicon etching method

A polysilicon, etch rate technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the device cannot fully meet the requirements of polysilicon morphology

Inactive Publication Date: 2019-06-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, etching is affected by different etching rates. In some cases, changing the etching gas cannot fully meet the morphology requirements of the device for polysilicon.

Method used

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  • Polycrystalline silicon etching method

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Embodiment Construction

[0011] The invention provides a polysilicon etching method, which controls the etching of different parts by doping different types of impurities into different parts of the polysilicon to be etched, or doping the same type of impurities with different concentrations, and then performing etching rate.

[0012] When polysilicon is doped with N-type impurities, the etch rate will become faster, and the higher the impurity concentration, the faster the etch rate; when polysilicon is doped with P-type impurities, the etch rate will be slower, and the higher the impurity concentration, the faster the etch rate. slow.

[0013] The doped impurity is not limited, and any impurity that can form N-type or P-type is acceptable.

[0014] By adjusting the doping type or doping concentration, different polysilicon shapes can be etched. Such as figure 1 As shown, when the upper layer of polysilicon is N-type doped and the lower layer is P-type doped, or the upper and lower layers of polys...

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Abstract

The invention discloses a polycrystalline silicon etching method. According to the method, by doping different types of impurities into different parts of polycrystalline silicon required to be etched, or doping impurities of the same type with different concentrations and then performing etching, etching rates of different parts are controlled, and therefore the morphology of the polycrystallinesilicon is changed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a polysilicon etching method. Background technique [0002] Polysilicon etching is an indispensable process step in the manufacture of semiconductor devices. Usually, the morphology of polysilicon is adjusted by changing the etching gas. Common polysilicon etching gases are chlorine gas, bromine gas or a mixture of the two. Chlorine gas can produce anisotropic silicon sidewall profile and has a good selectivity ratio to silicon oxide, and bromine-based gas is also anisotropic and has a high selectivity ratio to silicon oxide and silicon nitride. However, etching is affected by different etching rates. In some cases, changing the etching gas cannot fully meet the device's morphology requirements for polysilicon. Contents of the invention [0003] The object of the present invention is to provide a method for etching polysilicon, which can adjust the etching rate of po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213H01L21/3215
Inventor 陈曦黄景丰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP