A plasma etching chamber

Abstract

The invention discloses a plasma etching chamber. An adjusting ring on the periphery of an upper electrode is composed of an inner ring and an outer ring with impedance difference more than two times to adjust radio frequency coupling inside the plasma etching chamber, thus the etching efficiency on the edge of a substrate is influenced, evenness of etching of the substrate is adjusted, a longitudinal etching deep hole and a lateral etching groove can be achieved under the same etching condition, and good evenness is kept.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a plasma etching chamber. Background technique [0002] In the plasma etching chamber, it usually includes a vacuum processing chamber, an upper electrode and a lower electrode are arranged in the vacuum processing chamber, an electrostatic chuck is arranged above the lower electrode, and the substrate to be processed is placed on the electrostatic chuck; the outer periphery of the upper electrode is usually arranged An adjustment ring is used to adjust the RF power coupling coefficient and the uniformity of etching in the vacuum processing chamber. In different applications, the material of the adjustment ring is different. For example, when etching a deep hole vertically, you need to use an edge ring made of silicon or silicon carbide; when etching a trench laterally, you need to use an edge ring made of quartz. At present, it has become a trend to simultaneo...

AI Technical Summary

Problems solved by technology

Adjustment rings made of silicon or silicon carbide and adjustment rings made of quartz are not suitable

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