Etching composition for silicon nitride film
A silicon nitride film and composition technology, applied in the direction of surface etching composition, chemical instruments and methods, electrical components, etc., can solve the problems of corrosion, troublesome use, poor removal of silicon nitride film, etc.
Active Publication Date: 2021-10-19
YC化学制品株式会社
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Problems solved by technology
[0005] However, in this process, there is a problem that if the amount of pure water is slightly changed, the removal of the silicon nitride film will be poor.
Also, since phosphoric acid itself is a strong acid, it is corrosive and thus cumbersome to work with
[0006] As the prior art, there is known an etching composition produced by mixing hydrofluoric acid or nitric acid with phosphoric acid, but this will instead lead to a negative result of reducing the selectivity ratio of the silicon nitride film and the silicon oxide film. When hydrofluoric acid is mixed, there is a disadvantage that the selection ratio of the silicon nitride film and the silicon oxide film changes greatly as the number of process batches increases
Method used
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Embodiment 1 to 11
[0042] The composition components and composition ratios described in Table 1 and Table 2 were put into each experimental beaker equipped with a magnetic bar, and then stirred at room temperature at a speed of 500 rpm for 10 minutes to prepare a composition.
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The present invention relates to an etching composition for a silicon nitride film, comprising an organic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention has an effect of selectively removing a silicon nitride film while minimizing damage to a lower metal film and etching of a silicon oxide film.
Description
technical field [0001] The present invention relates to a composition for selectively etching a silicon nitride film with respect to a silicon oxide film. Background technique [0002] A silicon oxide film and a silicon nitride film are used as typical insulating films in semiconductor manufacturing processes, and they may be used alone or in alternate layers of a silicon oxide film and a silicon nitride film. [0003] In addition, the silicon oxide film and silicon nitride film are also used as hard masks for forming conductive patterns such as metal wirings. [0004] Generally, phosphoric acid is used to remove the silicon nitride film in a semiconductor wet process, but it is necessary to continuously supply pure water in order to prevent the selectivity of the silicon oxide film from being low or changing. [0005] However, in this process, there is a problem that if the amount of pure water is slightly changed, poor removal of the silicon nitride film will occur. Furt...
Claims
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IPC IPC(8): C09K13/06C09K13/08
CPCC09K13/06C09K13/08H01L21/31111H01L21/30604
Inventor 李昇勋李昇炫金胜焕陈昇吾
Owner YC化学制品株式会社