Integrated circuit with electrostatic protection structure

Abstract

The invention discloses an integrated circuit with a static protection structure which includes: an input port ESD protection unit, an output port ESD protection unit, an inner core power ESD protection unit, an I / O power ESD protection unit, an input / output bidirectional port ESD protection unit and an inner core logic unit. Compared with the traditional static discharge protection circuit and method, a special static discharge protection structure is adopted by the technical scheme proposed by the invention to aim at the bidirectional input / output ports adopted massively in a programmable logic apparatus. Based on the adoption, the invention further provides a static discharge protection circuit structure of an integrated circuit which is compatible with the bidirectional input / output ports, thus greatly improving the protection capacity of the whole chip to static discharge and being able to effectively amend the problem of the chip reliability brought by the chip burning caused bystatic discharge.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits and relates to electrostatic protection of integrated circuits. Background technique [0002] Electrostatic Discharge (ESD) is a major cause of failure of integrated circuits. During the process of chip manufacturing, production, assembly, testing, and transportation, due to various external reasons, static electricity will accumulate inside the human body, equipment, and chips. People inadvertently make charged bodies and chip pins contact each other to form a discharge circuit. . If there is no effective electrostatic discharge protection circuit inside the chip, the huge current generated at the moment of discharge will easily burn the chip permanently. Therefore, in the chip design process, designers generally design special ESD protection circuits inside the chip. The ESD protection circuit provides a special discharge path for the huge current generated at the moment of electr...

AI Technical Summary

Problems solved by technology

[0016] In order to solve the problem that the existing technology does not have various discharge modes and discharge test combinations inside the chip, various corresponding low-resistance discharge paths are designed for the electrostatic discharge current, so that the electrostatic discharge current can only flow through the chip, resulting in permanent discharge. In order to solve the damage problem, the present invention proposes a bidirectional input / output port electrostatic discharge protection unit structure that is fully compatible with deep submicron CMOS technology. The electrostatic discharge between input / output pins is protected, simultaneously, in the present invention, in conjunction with this bidirectional input / output port ESD protection unit, proposed improved integrated circuit ESD protection structure and design principle, for this the present invention provides An integrated circuit with an electrostatic protection structure

Images