Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for producing latent catalyst and epoxy resin composition

一种制造方法、潜伏性的技术,应用在化学仪器和方法、物理/化学过程催化剂、有机化合物/氢化物/配位配合物催化剂等方向,能够解决难以获得高产率高纯度等问题,达到优异流动性的效果

Active Publication Date: 2011-01-19
SUMITOMO BAKELITE CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes it difficult to obtain high-yield and high-purity target product phosphonium silicate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for producing latent catalyst and epoxy resin composition
  • Process for producing latent catalyst and epoxy resin composition
  • Process for producing latent catalyst and epoxy resin composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

Embodiment 2

Embodiment 3

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process for producing a latent phosphonium silicate catalyst, characterized by reacting a proton donor (A) represented by the general formula (1), a trialkoxysilane compound (B), and a phosphonium salt compound (D) represented by the general formula (2) in the presence of a metal alkoxide compound (C).

Description

Technical field The invention relates to a method for manufacturing a latent catalyst, and also relates to an epoxy resin composition. Background technique As a method of encapsulating semiconductor devices (such as IC and LSI) to manufacture semiconductor devices, due to low cost and suitability for mass production, transfer molding methods using epoxy resin compositions are widely used. The characteristics and reliability of semiconductor devices are improved by improving epoxy resins or phenol resins as curing agents. However, with the current market trend toward small-size, light-weight, and high-performance electronic devices, the integration degree of semiconductors used in such devices has increased year by year, and the surface assembly of semiconductor devices has been promoted. In this case, there are very strict requirements for the epoxy resin composition used to encapsulate the semiconductor chip. So there are some problems that cannot be solved by traditional ep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08G59/68
CPCC08G59/688C08G59/68B01J31/00
Inventor 乡义幸
Owner SUMITOMO BAKELITE CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More