Magnetron sputtering target having magnetic field enhancing and adjusting functions

A magnetron sputtering, functional technology, applied in the field of magnetron sputtering targets

Inactive Publication Date: 2008-10-08
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems existing in the existing common planar magnetron sputtering targets, the present invention provides a magnetron sputtering target with magnetic field enhancement and adjustment functions

Method used

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  • Magnetron sputtering target having magnetic field enhancing and adjusting functions
  • Magnetron sputtering target having magnetic field enhancing and adjusting functions
  • Magnetron sputtering target having magnetic field enhancing and adjusting functions

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Embodiment Construction

[0018] The composition of this embodiment is as figure 1 As shown: the target shell 22 and the target base 24 constitute the target body, the target material 17 is fixed on the target shell 22 through the pressure ring and the screw IV20, the central magnetic column 18, the positive magnetic ring 19, the side magnetic ring 21 and the magnetic yoke iron 25 form the internal magnetic circuit. Outside the magnetically permeable yoke where the rear part of the positive magnetic ring 19 meets the magnetically permeable yoke 25 , a radially magnetized side magnetic ring 21 is arranged. The axial height of the side magnetic ring 21 is equal to or slightly smaller than the side height of the magnetic yoke iron 25 ; the radial thickness of the side magnetic ring 21 is 1 / 2-1 / 3 of the radial thickness of the positive magnetic ring 19 . The magnetization direction and assembly relationship of the central magnetic column 18, the positive magnetic ring 19 and the side magnetic ring 21 are ...

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Abstract

The invention relates to a magnetic controlled sputtering target with functions of magnetic field enhancement and adjustment. The magnetic controlled sputtering target comprises a target body, an internal magnetic circuit and a water cooling system, and is characterized in that a radial magnetism charge side magnetic ring is arranged outside a magnetic conductive yoke where the rear part of a positive magnetic ring is connected with a magnetic conductive yoke iron; a double-stage position adjusting mechanism is arranged at the lower part of the target. The side magnetic ring can reduce the magnetic leakage flux outside the target obviously, the horizontal magnetic field on the surface of target is enhanced greatly, and therefore, the strong magnetic field requirement on coating a ferromagnet can be met. The double-stage position regulating mechanism can change the front and rear positions of the target face relative to the flange plate of target seat in on-line and continuous ways, therefore to adjust the front and rear positions of the target-substrate distance of the target and the internal magnetic circuit structural section of the target relative to the surface of the target, to ensure that the target is suitable for different sputtering and filming process of the target which have different requirements on the surface magnetic field, such as different magnetic conductibility and different thickness. The invention provides a convenient and fast key component structure for adjusting the magnetic controlled sputtering and filming process parameter.

Description

technical field [0001] The invention relates to the technical field of vacuum coating, in particular to a magnetron sputtering target with magnetic field enhancement and adjustment functions in a vacuum coating machine. Background technique [0002] Magnetron sputtering vacuum coating technology is an extremely widely used vacuum coating technology, and magnetron sputtering target is the core component of magnetron sputtering coating equipment. Among them, circular and rectangular planar magnetron sputtering targets are the most commonly used structural forms. [0003] The magnetic circuit structure inside the magnetron sputtering target is the key technology of the target. The function of the magnetic circuit structure is to generate a horizontal magnetic field parallel to the target surface above the target surface, forming a closed loop, and higher than 200Gs, so as to provide the necessary magnetic field conditions for the normal magnetron discharge when the target is w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 张世伟徐成海张晓玉戴今古
Owner NORTHEASTERN UNIV
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