NMOS pipe built-in bidirectional thyristor electrostatic protection device

Abstract

The invention discloses a NMOS pipe embedded type bidirectional controllable silicon static protection device which includes a P-type substrate. A N trap, a first T trap and a second T trap are equipped on the P-type substrate, the N trap surrounds four sides of the first T trap and the second T trap, a P+ diffusion active region and a N+ diffusion active region are arranged on the first T trap and the second T trap, a N+ diffusion active region is arranged on the N trap between the first T trap and the second T trap, surface of the T traps between the N+ diffusion active regions is covered with a multi-crystal silicon layer, the multi-crystal silicon layer is insulated to the first T trap and the second T trap by a SiO2 oxide layer, and each of the diffusion active regions are insulated by a shallow groove. The multi-crystal silicon layer on surface of the T traps between the N+ diffusion active regions, the P+ diffusion active region and the N+ diffusion active region on the T trap are equivalent to an embedded NMOS pipe and can greatly reduce trigger voltage of the bidirectional controllable silicon static protection device.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an NMOS tube-embedded bidirectional thyristor electrostatic protection device. Background technique [0002] Electrostatic discharge (ESD, Electron Static Discharge) is an instantaneous process in which a large amount of static charge is poured into the integrated circuit from the outside to the inside when the pins of an integrated circuit are floating, and the whole process takes about 100ns. In addition, hundreds or even thousands of volts of high voltage will be generated during the electrostatic discharge of the integrated circuit, which will break down the gate oxide layer of the input stage in the integrated circuit. With the advancement of integrated circuit technology, the feature size of MOS transistors is getting smaller and smaller, and the thickness of the gate oxide layer is getting thinner. In this trend, high-performance ESD protection devices are used...

AI Technical Summary

Problems solved by technology

[0007] Although the bidirectional thyristor ESD protection device can provide discharge paths in two directions, the trigger voltage is generally high, which greatly limits its application range

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