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HEMT device and manufacturing method thereof

A device and dielectric layer technology, which is applied in the field of wide bandgap semiconductor GaN HEMT devices, can solve the problems of high leakage current and lower peak value of floating gate edge electric field, etc.

Active Publication Date: 2010-08-25
GPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the Schottky contact electrode is that the leakage current is relatively high when the voltage is negatively biased.
Due to this leakage current, the free charge cannot accumulate sufficiently on the metal floating gate, and the result is that the peak value of the electric field at the edge of the floating gate is reduced

Method used

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  • HEMT device and manufacturing method thereof
  • HEMT device and manufacturing method thereof
  • HEMT device and manufacturing method thereof

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Embodiment Construction

[0017] Hereinafter, each preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0018] Figure 2 shows the structure of the GaN enhanced field effect transistor of the present invention. The substrate 12 on which the gallium nitride material is grown is generally Sapphire, SiC or silicon. The nucleation layer 13 is grown on the substrate 12; on the substrate 12 is a GaN buffer layer 14; on the buffer layer is an AlGaN isolation layer 15. The two ohmic contacts respectively form the source 22 and the drain 23 of the field effect transistor. In the area between the source electrode 22 and the drain electrode 23, the surface of the device is completely covered by the SiN dielectric 32. In the SiN medium near the AlGaN surface, the double-layer gate structure is wrapped. The upper layer of the gate is conductive metal 24; the lower layer is SiO 2 Medium 33, and SiO 2 The dielectric only exists under the gate metal 24...

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Abstract

The invention provides an HEMT component and a method for manufacturing the HEMT component. The HEMT component is provided according to one side of the invention, which comprises: a semiconductor layer on a substrate; an isolated layer on the semiconductor layer; a source electrode and a drain electrode which contact with the semiconductor layer; and a grid and at least one floating gate on the isolated layer, wherein the grid and the floating gate have a double-layer structure, wherein the upper layer is a conducting layer and the lower layer is a first medium layer.

Description

Technical field [0001] The invention relates to a wide-bandgap semiconductor gallium nitride HEMT (High Electron Mobility Transistor) device, and in particular to a device structure design that uses a plurality of insulator floating gate structures to increase the breakdown voltage of the gallium nitride HEMT. Background technique [0002] The dielectric breakdown voltage of the third-generation semiconductor gallium nitride (GaN) is much higher than that of the first-generation semiconductor silicon (Si) or the second-generation semiconductor gallium arsenide (GaAs), up to 3MV / cm, making its electronic devices able to withstand Very high voltage. The channel of the gallium nitride heterojunction structure has a high electron concentration and electron mobility, which means that the gallium nitride high electron mobility transistor (HEMT) can conduct high current at high frequency and has a very low conductivity. Through resistance. In addition, gallium nitride is a wide band g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/49H01L29/423H01L21/335H01L21/28
CPCH01L29/404H01L29/0657H01L29/2003H01L29/407H01L29/4236H01L29/7786
Inventor 张乃千
Owner GPOWER SEMICON